BUZ71A STMicroelectronics, BUZ71A Datasheet - Page 3

• Manufacturer Part Number: BUZ71A
• Description: MOSFET Power TO-220 N-CH 50V 30A
• Manufacturer: STMicroelectronics

Specifications of BUZ71A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 35 ns
• Minimum Operating Temperature: - 65 C
• Rise Time: 65 ns
• Lead Free Status / Rohs Status: No

ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area
Symbol
V
I
SD
I
SDM
Q
t
SD
rr
rr
( )
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Parameter
I
I
V
SD
SD
DD
= 14 A
= 28 A
= 30 V
Test Conditions
di/dt = 100 A/ s
V
T
GS
j
= 150
= 0
Thermal Impedance
o
C
Min.
Typ.
0.17
65
Max.
1.8
13
52
BUZ71A
Unit
ns
A
A
V
C
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