BF543E6327 Infineon Technologies, BF543E6327 Datasheet
BF543E6327
Manufacturer Part Number
BF543E6327
Description
Manufacturer
Infineon Technologies
Datasheet
1.BF543E6327.pdf
(5 pages)
Specifications of BF543E6327
Channel Type
N
Continuous Drain Current
0.03A
Drain Source Voltage (max)
20V
Power Gain (typ)@vds
22@10VdB
Noise Figure (max)
1(Typ)dB
Frequency (max)
300MHz
Package Type
SOT-23
Pin Count
3
Forward Transconductance (typ)
0.012S
Input Capacitance (typ)@vds
2.7@10VpF
Output Capacitance (typ)@vds
0.9@10VpF
Reverse Capacitance (typ)
0.018@10VpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
Silicon N-Channel MOSFET Triode
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
BF543
Maximum Ratings
Parameter
Drain-source voltage
Drain current
Gate-source peak current
Storage temperature
Ambient temperature range
Channel temperature
Thermal Resistance
Total power dissipation, T
Channel - soldering point
1 For calculation of R
For high-frequency stages up to 300 MHz
I
preferably in FM applications
DSS
= 4mA, g
fs
thJA
= 12mS
please refer to Application Note Thermal Resistance
Marking
LDs
1)
S
76 °C
1 = G
Pin Configuration
1
2 = D
Symbol
V
I
P
T
T
T
R
D
stg
A
ch
DS
tot
I
thchs
GSM
3 = S
-55 ... 150
-55 ... 150
3
Value
200
150
370
20
30
10
Package
SOT23
1
Jun-28-2001
VPS05161
BF543
Unit
V
mA
mW
°C
K/W
2
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BF543E6327 Summary of contents
Page 1
Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications I = 4mA 12mS DSS fs ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution! Type ...
Page 2
Electrical Characteristics at T Parameter DC characteristics Drain-source breakdown voltage µ Gate-source breakdown voltage mA Gate-source leakage current V = ...
Page 3
Total power dissipation P 300 mW 200 150 100 Gate transconductance 10 4mA 1kHz DS DSS BF 543 -0.1 ...
Page 4
Gate input capacitance 10 4mA 1MHz DS DSS BF 543 5 C gss -0.1 0 Reverse transfer capacitance ...
Page 5
Gate forward transfer admittance 10V 4mA DSS GS (source circuit) BF 543 0 b 21s mS -5 300 400 MHz 500 MHz 600 MHz 700 MHz f = 800 MHz - ...