MRF377R3 Freescale Semiconductor, MRF377R3 Datasheet - Page 3

• Manufacturer Part Number: MRF377R3
• Manufacturer: Freescale Semiconductor

Specifications of MRF377R3

• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 17A
• Drain Source Voltage (max): 65V
• Output Power (max): 45W
• Power Gain (typ)@vds: 18.2/17.5dB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: NI-860C3
• Pin Count: 5
• Reverse Capacitance (typ): 3.2@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 34.3%
• Mounting: Screw
• Mode Of Operation: ATSC 8VSB/DVB-T OFDM
• Number Of Elements: 1
• Power Dissipation (max): 486000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
T
ypical Characteristics
1. Measured in push - pull configuration.
Common Source Power Gain
Drain Efficiency
Intermodulation Distortion
(V
(V
(V
DD
DD
DD
= 32 Vdc, P
= 32 Vdc, P
= 32 Vdc, P
out
out
out
= 80 W Avg., I
= 80 W Avg., I
= 80 W Avg., I
Characteristic
(In ATSC 8VSB Single - Channel, Broadband Fixture, 50 ohm system)
DQ
DQ
DQ
(T
= 2 x 1000 mA)
= 2 x 1000 mA)
= 2 x 1000 mA)
C
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
f = 470 MHz
f = 560 MHz
f = 660 MHz
f = 760 MHz
f = 860 MHz
= 25°C unless otherwise noted)
Symbol
IMD
G
η
ps
(continued)
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
(1)
17.5
17.5
17.2
17.2
16.6
31.0
34.3
30.1
29.6
27.8
31.7
32.7
32.9
34.2
35.4
Typ
MRF377 MRF377R3 MRF377R5
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
dBc
dB
%
3