MRF377R3 Freescale Semiconductor, MRF377R3 Datasheet

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MRF377R3

Manufacturer Part Number
MRF377R3
Description
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF377R3

Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
17A
Drain Source Voltage (max)
65V
Output Power (max)
45W
Power Gain (typ)@vds
18.2/17.5dB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
NI-860C3
Pin Count
5
Reverse Capacitance (typ)
3.2@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
34.3%
Mounting
Screw
Mode Of Operation
ATSC 8VSB/DVB-T OFDM
Number Of Elements
1
Power Dissipation (max)
486000mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
© Freescale Semiconductor, Inc., 2004, 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field - Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large- signal, common source amplifier applications in 32
volt digital television transmitter equipment.
• Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts,
• Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts,
• Internally Input and Output Matched for Ease of Use
• Integrated ESD Protection
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 1. Maximum Ratings
1. Each side of device measured separately.
Drain - Source Voltage
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Charge Device Model
Designed for broadband commercial and industrial applications with frequen-
I
I
OFDM Output Power
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
DQ
DQ
Derate above 25°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 45 Watts Avg.
Power Gain ≥ 16.7 dB
Efficiency ≥ 21%
ACPR ≤ - 58 dBc
Output Power — 80 Watts Avg.
Power Gain ≥ 16.5 dB
Efficiency ≥ 27.5%
IMD ≤ - 31.3 dBc
= 2.0 A, 8K Mode, 64 QAM
= 2.0 A
C
(1)
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
DSS
T
I
θJC
GS
stg
D
D
J
470 - 860 MHz, 240 W, 32 V
CASE 375G - 04, STYLE 1
MRF377 MRF377R3 MRF377R5
Document Number: MRF377
LATERAL N - CHANNEL
RF POWER MOSFET
M3 (Minimum)
1 (Minimum)
7 (Minimum)
MRF377R3
MRF377R5
- 65 to +150
- 0.5, +65
- 0.5, +15
MRF377
Value
Value
Class
2.78
0.36
486
200
NI - 860C3
17
Rev. 1, 12/2004
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Adc
°C
°C
W
1

Related parts for MRF377R3

MRF377R3 Summary of contents

Page 1

... MHz, 240 LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 860C3 Symbol Value Unit V - 0.5, +65 DSS V - 0.5, + 486 D 2.78 W/° +150 stg T 200 J Symbol Value Unit R 0.36 °C/W θJC Class 1 (Minimum) M3 (Minimum) 7 (Minimum) MRF377 MRF377R3 MRF377R5 Vdc Vdc Adc W °C °C 1 ...

Page 2

... Drain Efficiency ( Vdc Avg 1000 mA) DD out DQ Adjacent Channel Power Ratio ( Vdc Avg 1000 mA) DD out DQ 1. Each side of device measured separately. 2. Measured in push - pull configuration. MRF377 MRF377R3 MRF377R5 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I DSS I GSS V GS(th) V GS(Q) V DS(on) C ...

Page 3

... MRF377 MRF377R3 MRF377R5 Unit dB % dBc 3 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 1. 845 - 875 MHz Narrowband Test Circuit Component Layout MRF377 MRF377R3 MRF377R5 4 Description = 2.56 ...

Page 5

... DQ 1800 mA 2000 mA 2200 Vdc 859.95 MHz 860.05 MHz 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power Vdc 2000 859.95 MHz 860.05 MHz η 100 P , OUTPUT POWER (WATTS) PEP out Output Power −20 −40 −60 −80 MRF377 MRF377R3 MRF377R5 5 ...

Page 6

... Figure 7. 845 - 875 MHz Narrowband Series Equivalent Source and Load Impedance MRF377 MRF377R3 MRF377R5 845 MHz Z load Z source f = 875 MHz f = 845 MHz 1000 mA Avg., DVBT OFDM DD DQ out source MHz Ω 845 4.66 - j5.90 8.59 - j4.22 860 4.38 - j5.64 9.36 - j4.95 875 3 ...

Page 7

... Fair - Rite DS Electronics AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera Gigatronics AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX Kemet Kemet Kemet Tecate United Chemi - Con AVX CoilCraft CoilCraft CoilCraft CoilCraft DS Electronics MRF377 MRF377R3 MRF377R5 7 ...

Page 8

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Topside View Figure 8. 470 - 860 MHz Broadband Test Circuit Component Layout MRF377 MRF377R3 MRF377R5 8 C19 C32 L3 ...

Page 9

... Vdc 560 MHz = 2000 mA 860 MHz 760 MHz OUTPUT POWER (WATTS) AVG. out Figure 11. Single - Channel DVBT OFDM Output Power 7.61 MHz 4 kHz BW 4 kHz BW −4 −3 −2 − FREQUENCY (MHz) MRF377 MRF377R3 MRF377R5 470 MHz 660 MHz 100 ...

Page 10

... MHz 660 MHz −40 760 MHz 560 MHz −45 − OUTPUT POWER (WATTS) AVG. out Figure 17. Single - Channel ATSC 8VSB Broadband Performance Adjacent Channel Power Ratio versus Output Power MRF377 MRF377R3 MRF377R5 Vdc (Avg.) out I = 2000 mA DQ ATSC 8VSB 480 ...

Page 11

... Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured load from drain to drain, balanced configuration. Device Input + Under Matching Test Network − source f = 470 MHz Z load f = 860 MHz = 10 Ω load Ω Output − Matching Network + load MRF377 MRF377R3 MRF377R5 11 ...

Page 12

... MRF377 MRF377R3 MRF377R5 12 NOTES RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor NOTES MRF377 MRF377R3 MRF377R5 13 ...

Page 14

... MRF377 MRF377R3 MRF377R5 14 NOTES RF Device Data Freescale Semiconductor ...

Page 15

... S 0.394 0.406 10.01 bbb 0.010 REF 0.25 REF T SEATING ccc 0.015 REF 0.38 REF PLANE STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE MRF377 MRF377R3 MRF377R5 MAX 34.16 9.91 5.69 8.51 1.78 0.15 2.72 4.19 22.05 22.07 3.30 10.29 10.31 15 ...

Page 16

... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF377 MRF377R3 MRF377R5 Document Number: MRF377 Rev. 1, 12/2004 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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