MRF1550T1 Freescale Semiconductor, MRF1550T1 Datasheet - Page 4

• Manufacturer Part Number: MRF1550T1
• Manufacturer: Freescale Semiconductor

Specifications of MRF1550T1

• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 12A
• Drain Source Voltage (max): 40V
• Output Power (max): 50W
• Power Gain (typ)@vds: 10(Min)dB
• Frequency (max): 175MHz
• Package Type: TO-272 EP
• Pin Count: 6
• Drain Source Resistance (max): 500@5Vmohm
• Input Capacitance (typ)@vds: 500(Max)@12.5VpF
• Output Capacitance (typ)@vds: 250(Max)@12.5VpF
• Reverse Capacitance (typ): 35(Max)@12.5VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50(Min)%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 165000mW
• Vswr (max): 20
• Screening Level: Military
• Lead Free Status / Rohs Status: Not Compliant

MRF1550T1 MRF1550FT1
4
16
15
12
14
13
10
11
70
65
60
55
50
90
80
70
60
50
40
30
200
10
10
Figure 6. Output Power versus Biasing Current
Figure 8. Output Power versus Supply Voltage
20
Figure 4. Gain versus Output Power
400
11
135 MHz
V
135 MHz
DD
P
30
I
out
DQ
, SUPPLY VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS)
, BIASING CURRENT (mA)
600
12
40
175 MHz
155 MHz
155 MHz
175 MHz
50
800
13
175 MHz
V
P
60
I
P
DD
in
DQ
in
= 35 dBm
V
= 35 dBm
= 12.5 Vdc
= 500 mA
155 MHz
TYPICAL CHARACTERISTICS
1000
DD
14
135 MHz
= 12.5 Vdc
70
1200
80
15
80
70
60
50
40
30
80
70
60
50
40
80
70
60
50
40
10
200
10
Figure 9. Drain Efficiency versus Supply Voltage
Figure 5. Drain Efficiency versus Output Power
20
Figure 7. Drain Efficiency versus
400
11
P
V
I
out
30
DQ
DD
, OUTPUT POWER (WATTS)
, SUPPLY VOLTAGE (VOLTS)
, BIASING CURRENT (mA)
155 MHz
Biasing Current
175 MHz
600
155 MHz
12
40
135 MHz
135 MHz
50
800
13
Freescale Semiconductor
175 MHz
135 MHz
155 MHz
V
P
60
I
P
DD
in
DQ
175 MHz
in
V
= 35 dBm
= 35 dBm
= 12.5 Vdc
= 500 mA
DD
1000
RF Device Data
14
= 12.5 Vdc
70
1200
80
15