MRF1550T1 Freescale Semiconductor, MRF1550T1 Datasheet
MRF1550T1
Specifications of MRF1550T1
Related parts for MRF1550T1
MRF1550T1 Summary of contents
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... NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Rating – θJC Document Number: MRF1550T1 Rev. 9, 5/2006 MRF1550T1 MRF1550FT1 175 MHz 12.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1264 - 09, STYLE 1 ...
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... GS RF Characteristics (In Freescale Test Fixture) Common - Source Amplifier Power Gain (V = 12.5 Vdc Watts 500 mA) DD out DQ Drain Efficiency (V = 12.5 Vdc Watts 500 mA) DD out DQ MRF1550T1 MRF1550FT1 2 = 25°C unless otherwise noted) C Symbol DS(on 175 MHz f = 175 MHz Min Typ Max — ...
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... Microstrip 0.270″ x 0.080″ Microstrip 0.730″ x 0.080″ Microstrip ® Glass Teflon , 31 mils V = 12.5 Vdc DD 175 MHz 135 MHz 155 MHz OUTPUT POWER (WATTS) out Figure 3. Input Return Loss versus Output Power MRF1550T1 MRF1550FT1 RF OUTPUT 80 3 ...
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... I , BIASING CURRENT (mA) DQ Figure 6. Output Power versus Biasing Current 135 MHz 60 175 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 8. Output Power versus Supply Voltage MRF1550T1 MRF1550FT1 4 TYPICAL CHARACTERISTICS 80 70 135 MHz 12.5 Vdc Figure 5. Drain Efficiency versus Output Power 12.5 Vdc ...
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... Z = Complex conjugate of source in impedance Complex conjugate of the load OL impedance at given output power, voltage, frequency, and η > Input Device Matching Under Test Network Output Matching Network MRF1550T1 MRF1550FT1 5 ...
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... ∠ φ MHz 11 50 0.97 - 179 100 0.96 - 179 150 0.96 - 179 200 0.96 - 179 250 0.97 - 179 300 0.97 - 179 350 0.97 - 179 MRF1550T1 MRF1550FT1 6 = 12.5 Vdc 500 ∠ φ 4.817 80 0.009 2.212 69 0.009 1.349 61 0.008 0.892 54 0.006 0.648 51 0 ...
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... RF Device Data Freescale Semiconductor = 12.5 Vdc) (continued 4.0 mA (continued ∠ φ 0.49 63 0.005 0.41 63 0.005 0.36 62 0.003 0.32 58 0.004 0.27 58 0.009 S 22 ∠ φ ∠ φ 0.97 - 173 73 0.98 - 173 128 0.98 - 173 57 0.99 - 174 83 0.98 - 174 MRF1550T1 MRF1550FT1 7 ...
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... One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance the linear region of the output characteristic and is speci- fied at a specific gate - source voltage and drain current. The MRF1550T1 MRF1550FT1 8 APPLICATIONS INFORMATION drain - source voltage under these conditions is termed V ...
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... Two - port stability analysis with this device’ parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Free- scale Application Note AN215A, “RF Small - Signal Design Using Two - Port Parameters” for a discussion of two port network theory and stability. MRF1550T1 MRF1550FT1 9 ...
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... aaa aaa aaa DATUM H PLANE MRF1550T1 MRF1550FT1 10 PACKAGE DIMENSIONS DRAIN SEATING C PLANE SEATING PLANE STYLE 1: PIN 1. SOURCE (COMMON) 2. DRAIN 3. SOURCE (COMMON) 4. SOURCE (COMMON) 5. GATE 6. SOURCE (COMMON) CASE 1264 - 09 ISSUE 272- 6 WRAP PLASTIC MRF1550T1 DRAIN ID Ç Ç Ç Ç Ç Ç Ç Ç ...
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... BSC 4.32 BSC F 0.025 BSC 0.64 BSC P 0.126 0.134 3.20 3.40 b1 0.193 0.199 4.90 5.05 b2 0.078 0.084 1.98 2.13 b3 0.088 0.094 2.24 2.39 c1 0.007 0.011 0.178 0.279 e 0.193 BSC 4.90 BSC aaa 0.004 0.10 bbb 0.008 0.20 MRF1550T1 MRF1550FT1 B 11 ...
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... For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF1550T1 MRF1550FT1 Document Number: MRF1550T1 Rev. 9, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...