MRF19045 Freescale Semiconductor, MRF19045 Datasheet - Page 6

• Manufacturer Part Number: MRF19045
• Manufacturer: Freescale Semiconductor

Specifications of MRF19045

• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 9.5W
• Power Gain (typ)@vds: 14.9dB
• Frequency (min): 1.9GHz
• Frequency (max): 2GHz
• Package Type: NI-400
• Pin Count: 3
• Forward Transconductance (typ): 4.2S
• Reverse Capacitance (typ): 1.8@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 23.5%
• Mounting: Surface Mount
• Mode Of Operation: CDMA/IS-95 CDMA
• Number Of Elements: 1
• Power Dissipation (max): 105000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Figure 13. CW Two-Tone Intermodulation Distortion Products
Figure 11. CW Two-Tone Intermodulation Distortion
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
40
35
30
25
20
15
10
5
0
MRF19045LR3 MRF19045LSR3
6
0.1
0.1
Figure 9. CW Two-Tone Power Gain, IMD and
−20
−30
−40
−50
−60
−70
−80
−90
V
f1 = 1960 MHz, f2 = 1960.1 MHz
DD
0.1
Drain Efficiency versus Output Power
V
I
f1 = 1960 MHz, f2 = 1960.1 MHz
DQ
= 26 Vdc
DD
= 450 mA
= 26 Vdc
V
I
f1 = 1960 MHz, f2 = 1960.1 MHz
DQ
P
DD
out
versus Output Power
P
= 450 mA
5th Order
, OUTPUT POWER (WATTS PEP)
= 26 Vdc
out
, OUTPUT POWER (WATTS PEP)
G ps
3rd Order
1.0
P
versus Output Power
1.0
IMD
out
, OUTPUT POWER (WATTS PEP)
450 mA
550 mA
1.0
η
7th Order
700 mA
10
10
350 mA
10
TYPICAL CHARACTERISTICS
100
100
−25
−30
−35
−40
−45
−50
−55
−60
−65
100
Figure 10. CW Two-Tone Power Gain, Input Return Loss,
40
35
30
25
20
15
10
16.0
15.5
15.0
14.5
14.0
13.5
13.0
5
1900
0.1
−100
IMD and Drain Efficiency versus Frequency
Figure 12. CW Two-Tone Power Gain versus
−10
−20
−30
−40
−50
−60
−70
−80
−90
0
−7.5
700 mA
550 mA
450 mA
350 mA
−6
Figure 14. 2 - Carrier N - CDMA Spectrum
P
1930
IRL
G ps
IMD
out
η
Integrated BW
1.2288 MHz
, OUTPUT POWER (WATTS PEP)
−4.5
−IM3 in
f, FREQUENCY (MHz)
1.0
−ACPR in 30 kHz
V
I
100 kHz Tone Spacing
Output Power
DQ
Integrated BW
DD
−3
= 450 mA
f, FREQUENCY (MHz)
= 26 Vdc
1960
V
f1 = 1960 MHz, f2 = 1960.1 MHz
−1.5
DD
Channel BW
1.2288 MHz
= 26 Vdc
Freescale Semiconductor
0
+ACPR in 30 kHz
10
Integrated BW
1.5
1990
RF Device Data
Integrated BW
3
1.2288 MHz
+IM3 in
4.5
2020
100
6
0
−5
−10
−15
−20
−25
−30
−35
7.5