MRF19045 Freescale Semiconductor, MRF19045 Datasheet - Page 2

• Manufacturer Part Number: MRF19045
• Manufacturer: Freescale Semiconductor

Specifications of MRF19045

• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 9.5W
• Power Gain (typ)@vds: 14.9dB
• Frequency (min): 1.9GHz
• Frequency (max): 2GHz
• Package Type: NI-400
• Pin Count: 3
• Forward Transconductance (typ): 4.2S
• Reverse Capacitance (typ): 1.8@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 23.5%
• Mounting: Surface Mount
• Mode Of Operation: CDMA/IS-95 CDMA
• Number Of Elements: 1
• Power Dissipation (max): 105000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

MRF19045LR3 MRF19045LSR3
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics (DC)
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in
1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth.
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Forward Transconductance
Reverse Transfer Capacitance
Common - Source Amplifier Power Gain
Drain Efficiency
3rd Order Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
P
1. Part is internally matched both on input and output.
out
(V
(V
(V
(V
(V
(V
(V
(V
(V
I
(V
I
(V
I
a 1.2288 MHz Integrated Bandwidth Centered at f1 - 2.5 MHz and
f2 +2.5 MHz, Referenced to the Carrier Channel Power)
(V
f1 = 1930 MHz, f2 = 1932.5 MHz; ACPR measured in a 30 kHz
Integrated Bandwith Centered at f1 - 885 kHz and f2 +885 kHz)
(V
I
(V
DQ
DQ
DQ
DQ
, 1 dB Compression Point
DD
GS
DS
GS
DS
DS
GS
DS
DS
DD
DD
DD
DD
DD
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz; IM3 Measured in
= 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz)
= 26 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 26 Vdc, V
= 26 Vdc, P
= 0 Vdc, I
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, I
D
DS
D
D
D
D
DQ
out
= 100 μAdc)
GS
GS
out
out
out
out
= 100 μAdc)
= 550 mAdc)
= 2 Adc)
= 1 Adc)
= 0 Vdc)
= 550 mA, f = 1930 MHz)
= 9.5 W Avg, 2-carrier N-CDMA, I
= 0 Vdc)
= 0, f = 1.0 MHz)
= 9.5 W Avg, 2 - Carrier N - CDMA,
= 9.5 W Avg, 2 - Carrier N - CDMA,
= 9.5 W Avg, 2 - Carrier N - CDMA,
= 9.5 W Avg, 2 - Carrier N - CDMA,
Characteristic
(1)
(T
C
= 25°C unless otherwise noted)
DQ
= 550 mA,
V
Symbol
V
V
V
ACPR
(BR)DSS
P1dB
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
IRL
DSS
GSS
g
η
rss
fs
ps
Min
65
—
—
—
—
—
13
21
—
—
—
—
2
3
0.19
14.5
23.5
Typ
- 37
- 51
- 16
3.8
4.2
1.8
45
—
—
—
—
Freescale Semiconductor
Max
0.21
- 35
- 45
10
—
—
—
—
—
—
- 9
1
4
5
RF Device Data
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
pF
%
W
S