BLF404/T1 NXP Semiconductors, BLF404/T1 Datasheet
BLF404/T1
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BLF404/T1 Summary of contents
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DISCRETE SEMICONDUCTORS DATA SHEET BLF404 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 29 M3D175 2003 Sep 26 ...
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Philips Semiconductors UHF power MOS transistor FEATURES High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch Designed for broadband operation. APPLICATIONS Communication transmitters in the VHF/UHF range with a nominal supply voltage of 12.5 ...
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Philips Semiconductors UHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GS I drain current (DC total power dissipation tot T storage ...
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Philips Semiconductors UHF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage V (BR)DSS V gate-source threshold voltage GSth I drain-source leakage current DSS I gate-source leakage current GSS I on-state ...
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Philips Semiconductors UHF power MOS transistor 25 handbook, halfpage T.C. (mV/ Fig.3 Temperature coefficient of gate-source voltage as a function of drain current; typical values. 5 handbook, halfpage R ...
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Philips Semiconductors UHF power MOS transistor 10 handbook, halfpage C rs (pF MHz Fig.7 Feedback capacitance as a function of ...
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Philips Semiconductors UHF power MOS transistor 20 handbook, halfpage G p (dB CW, class-AB operation 500 MHz mA Fig.8 Power gain and ...
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Philips Semiconductors UHF power MOS transistor List of components; see Figs 10 and 11. COMPONENT DESCRIPTION C1 electrolytic capacitor C2, C3 multilayer ceramic chip capacitor C4 multilayer ceramic chip capacitor; note 1 C5, C10 multilayer ceramic chip capacitor; note 1 ...
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Philips Semiconductors UHF power MOS transistor handbook, full pagewidth L5 C4 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from ...
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Philips Semiconductors UHF power MOS transistor 8 handbook, halfpage 200 CW, class-AB operation 12 Fig.12 Input impedance ...
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Philips Semiconductors UHF power MOS transistor MOUNTING RECOMMENDATIONS Both the metallized ground plate and the device leads contribute to the heat flow recommended that the transistor be mounted on a grounded metallized area of the printed-circuit board. This ...
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Philips Semiconductors UHF power MOS transistor BLF404 scattering parameters mA; note (MHz 1.00 5.2 10 0.99 10.1 20 0.98 20.6 30 0.96 30.4 ...
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Philips Semiconductors UHF power MOS transistor PACKAGE OUTLINE Ceramic surface mounted package; 8 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 0.58 0.23 2.36 5.94 mm 0.43 ...
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Philips Semiconductors UHF power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...
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Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...