MRF1517T1 Freescale Semiconductor, MRF1517T1 Datasheet - Page 2

• Manufacturer Part Number: MRF1517T1
• Manufacturer: Freescale Semiconductor

Specifications of MRF1517T1

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 4A
• Drain Source Voltage (max): 25V
• Output Power (max): 8W
• Power Gain (typ)@vds: 11dB
• Frequency (max): 520MHz
• Package Type: PLD-1.5
• Pin Count: 4
• Forward Transconductance (typ): 0.9(Min)S
• Input Capacitance (typ)@vds: 66@7.5VpF
• Output Capacitance (typ)@vds: 38@7.5VpF
• Reverse Capacitance (typ): 6@7.5VpF
• Operating Temp Range: -65C to 150C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 62500mW
• Vswr (max): 20
• Screening Level: Military
• Lead Free Status / Rohs Status: Not Compliant

MRF1517T1
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture)
Zero Gate Voltage Drain Current
Gate - Source Leakage Current
Gate Threshold Voltage
Drain- Source On - Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Common - Source Amplifier Power Gain
Drain Efficiency
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
GS
DS
GS
DS
DS
DS
DS
DD
DD
B1, B2
C1
C2, C3, C4, C10,
C12, C13
C5, C11
C6, C18
C7, C15
C8, C16
C9, C17
C14
L1
N1, N2
= 35 Vdc, V
= 7.5 Vdc, I
= 10 Vdc, I
= 7.5 Vdc, V
= 7.5 Vdc, V
= 7.5 Vdc, V
= 10 Vdc, V
= 10 Vdc, I
= 7.5 Vdc, P
= 7.5 Vdc, P
INPUT
V
RF
GG
N1
D
D
D
GS
DS
GS
GS
GS
out
out
= 2 Adc)
= 1 Adc)
= 120 μAdc)
C1
= 0)
= 0)
C9
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 8 Watts, I
= 8 Watts, I
Z1
Short Ferrite Bead, Fair Rite Products
300 pF, 100 mil Chip Capacitor
0 to 20 pF, Trimmer Capacitor
43 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitor
10 μF, 50 V Electrolytic Capacitor
0.1 μF, 100 mil Chip Capacitor
1,000 pF, 100 mil Chip Capacitor
330 pF, 100 mil Chip Capacitor
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mount
Characteristic
(2743021446)
C8
C2
DQ
DQ
Z2
+
C7
= 150 mA, f = 520 MHz)
= 150 mA, f = 520 MHz)
(T
Figure 1. 480 - 520 MHz Broadband Test Circuit
C
C3
= 25°C unless otherwise noted)
Z3
R3
B1
C4
Z4
C5
R1
R2
Z5
DUT
C6
C18
Z6
Symbol
R1
R2
R3
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
V
V
I
C
I
DS(on)
GS(th)
C
C
G
DSS
GSS
g
η
oss
rss
iss
fs
ps
C10
Z7
L1
C11
Z8
Min
1.0
0.9
—
—
—
—
—
—
10
50
B2
C12
15 Ω, 0805 Chip Resistor
1.0 kΩ, 1/8 W Resistor
33 kΩ, 1/2 W Resistor
0.315″ x 0.080″ Microstrip
1.415″ x 0.080″ Microstrip
0.322″ x 0.080″ Microstrip
0.022″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.050″ x 0.080″ Microstrip
0.625″ x 0.080″ Microstrip
0.800″ x 0.080″ Microstrip
0.589″ x 0.080″ Microstrip
Glass Teflon
Z9
C17
C13
Typ
Z10
1.7
0.5
66
38
55
—
—
—
11
6
®
C14
, 31 mils, 2 oz. Copper
C16
Freescale Semiconductor
N2
+
Max
C15
2.1
—
—
—
—
—
—
—
1
1
RF
OUTPUT
RF Device Data
V
DD
μAdc
μAdc
Unit
Vdc
Vdc
pF
pF
pF
dB
%
S