MRF1517T1 Freescale Semiconductor, MRF1517T1 Datasheet

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MRF1517T1

Manufacturer Part Number
MRF1517T1
Description
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF1517T1

Application
VHF/UHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
4A
Drain Source Voltage (max)
25V
Output Power (max)
8W
Power Gain (typ)@vds
11dB
Frequency (max)
520MHz
Package Type
PLD-1.5
Pin Count
4
Forward Transconductance (typ)
0.9(Min)S
Input Capacitance (typ)@vds
66@7.5VpF
Output Capacitance (typ)@vds
38@7.5VpF
Reverse Capacitance (typ)
6@7.5VpF
Operating Temp Range
-65C to 150C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
62500mW
Vswr (max)
20
Screening Level
Military
Lead Free Status / Rohs Status
Not Compliant
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large - signal, common source
amplifier applications in 7.5 volt portable FM equipment.
• Specified Performance @ 520 MHz, 7.5 Volts
• Characterized with Series Equivalent Large - Signal
• Excellent Thermal Stability
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
• Broadband UHF/VHF Demonstration Amplifier
• Available in Tape and Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. Moisture Sensitivity Level
Replaced by MRF1517NT1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
1. Not designed for 12.5 volt applications.
2. Calculated based on the formula P
Drain- Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
The MRF1517 is designed for broadband commercial and industrial
Impedance Parameters
520 MHz, 2 dB Overdrive
Information Available Upon Request
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
Derate above 25°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 8 Watts
Power Gain — 11 dB
Efficiency — 55%
(1)
Test Methodology
C
= 25°C
Characteristic
Rating
D
(2)
=
T J – T C
R θJC
G
Rating
1
D
S
Symbol
Symbol
V
R
V
T
Package Peak Temperature
P
T
DSS
I
θJC
GS
stg
D
D
J
Document Number: MRF1517
260
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 466 - 03, STYLE 1
MRF1517T1
520 MHz, 8 W, 7.5 V
- 65 to +150
BROADBAND
- 0.5, +25
Value
Value
62.5
0.50
± 20
150
PLASTIC
PLD - 1.5
4
2
Rev. 3, 5/2006
MRF1517T1
W/°C
°C/W
Unit
Unit
Unit
Vdc
Vdc
Adc
°C
°C
°C
W
1

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MRF1517T1 Summary of contents

Page 1

... LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Symbol Value V - 0.5, +25 DSS V ± 62 +150 stg T 150 J Symbol Value R 2 θJC Package Peak Temperature 260 MRF1517T1 Unit Vdc Vdc Adc W W/°C °C °C Unit °C/W Unit °C 1 ...

Page 2

... Chip Capacitor C9, C17 1,000 pF, 100 mil Chip Capacitor C14 330 pF, 100 mil Chip Capacitor L1 55.5 nH, 5 Turn, Coilcraft N1, N2 Type N Flange Mount Figure 1. 480 - 520 MHz Broadband Test Circuit MRF1517T1 2 = 25°C unless otherwise noted) C Symbol I DSS I GSS V ...

Page 3

... Figure 2. Output Power versus Input Power RF Device Data Freescale Semiconductor 0 520 MHz 480 MHz −5 −10 −15 − 7.5 Vdc DD −25 0.6 0.8 1.0 1 480 MHz 520 MHz 500 MHz V = 7.5 Vdc OUTPUT POWER (WATTS) out Figure 3. Input Return Loss versus Output Power MRF1517T1 10 3 ...

Page 4

... I , BIASING CURRENT (mA) DQ Figure 6. Output Power versus Biasing Current 12 10 500 MHz 8 520 MHz 6 480 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 8. Output Power versus Supply Voltage MRF1517T1 7.5 Vdc Figure 5. Drain Efficiency versus Output Power 80 480 MHz 70 500 MHz 60 50 ...

Page 5

... Microstrip 0.048″ x 0.080″ Microstrip 0.577″ x 0.080″ Microstrip 1.135″ x 0.080″ Microstrip 0.076″ x 0.080″ Microstrip ® Glass Teflon , 31 mils, 2 oz. Copper 400 MHz 420 MHz 440 MHz V = 7.5 Vdc OUTPUT POWER (WATTS) out MRF1517T1 10 5 ...

Page 6

... I , BIASING CURRENT (mA) DQ Figure 15. Output Power versus Biasing Current 12 420 MHz 10 400 MHz 8 440 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 17. Output Power versus Supply Voltage MRF1517T1 6 70 420 MHz 7.5 Vdc Figure 14. Drain Efficiency versus Output Power 80 400 MHz 70 420 MHz ...

Page 7

... Microstrip 0.050″ x 0.080″ Microstrip 0.551″ x 0.080″ Microstrip 0.825″ x 0.080″ Microstrip 0.489″ x 0.080″ Microstrip ® Glass Teflon , 31 mils, 2 oz. Copper 460 MHz 440 MHz 480 MHz V = 7.5 Vdc OUTPUT POWER (WATTS) out MRF1517T1 ...

Page 8

... I , BIASING CURRENT (mA) DQ Figure 24. Output Power versus Biasing Current 12 10 440 MHz 8 460 MHz 480 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 26. Output Power versus Supply Voltage MRF1517T1 7.5 Vdc Figure 23. Drain Efficiency versus Output Power 27.5 dBm in 30 800 ...

Page 9

... 150 mA out MHz Ω Ω 400 1.96 +j3.32 2.52 +j0.39 420 2.31 +j3.56 2.61 +j0.64 440 1.60 +j3.45 2.37 +j1. Complex conjugate of source in impedance Complex conjugate of the load OL impedance at given output power, voltage, frequency, and η > Output Matching Network MRF1517T1 ...

Page 10

... MRF1517T1 10 = 7.5 Vdc 150 ∠ φ 17.66 97 0.016 8.86 85 0.016 4.17 72 0.015 2. ...

Page 11

... DS(on) ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. has a positive temperature DS(on) DSS can result in permanent GS ), whose value is application dependent 150 mA, which is the DQ DQ MRF1517T1 is not 9 Ω may 11 ...

Page 12

... Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721, “Impedance Matching Networks Applied to RF Power Transistors.” MRF1517T1 12 Large - signal impedances are provided, and will yield a good first pass approximation. ...

Page 13

... RF Device Data Freescale Semiconductor NOTES MRF1517T1 13 ...

Page 14

... MRF1517T1 14 NOTES RF Device Data Freescale Semiconductor ...

Page 15

... S 0.006 0.012 0.15 U 0.006 0.012 0.15 ZONE V 0.000 0.021 0.00 ZONE W 0.000 0.010 0.00 ZONE X 0.000 0.010 0.00 MRF1517T1 0.115 2.92 inches mm MAX 6.73 5.97 1.83 3.81 0.66 1.12 1.78 1.60 4.57 7.24 6.48 6.10 0.20 1.60 5.33 0.31 ...

Page 16

... RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF1517T1 Document Number: MRF1517 Rev. 3, 5/2006 16 ...

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