S595T-GS08 Vishay, S595T-GS08 Datasheet - Page 4
S595T-GS08
Manufacturer Part Number
S595T-GS08
Description
Manufacturer
Vishay
Datasheet
1.S595T-GS08.pdf
(10 pages)
Specifications of S595T-GS08
Application
VHF/UHF
Channel Mode
Enhancement
Continuous Drain Current
0.03A
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
28/20dB
Noise Figure (max)
1.3(Typ)dB
Package Type
SOT-143
Pin Count
3 +Tab
Input Capacitance (typ)@vds
2.3@5VpF
Output Capacitance (typ)@vds
1.1@5VpF
Reverse Capacitance (typ)
0.025@5VpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S595T-GS08
Manufacturer:
VISHAY
Quantity:
3 000
Part Number:
S595T-GS08
Manufacturer:
VISHAY/威世
Quantity:
20 000
S595T / S595TR / S595TRW
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
www.vishay.com
4
95 10759
95 11157
95 11158
Figure 1. Total Power Dissipation vs. Ambient Temperature
250
200
150
100
50
20
16
12
Figure 3. Drain Current vs. Gate 2 Source Voltage
20
16
12
Figure 2. Drain Current vs. Drain Source Voltage
0
8
4
0
8
4
0
0
0
0
V
T
25
V
V
G2S
amb
DS
DS
1
– AmbientTemperature (° C )
– Gate 2 Source Voltage ( V )
– Drain Source Voltage ( V )
1
= 5 V
50
2
75
2
3
100
V
1.5 V
G2S
3
125
= 4 V
4
1 V
3 V
2 V
150
5
4
Figure 4. Forward Transadmittance vs. Gate 2 Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Gate 2 Source Voltage
95 11159
13634
13635
Figure 6. Output Capacitance vs. Drain Source Voltage
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
2.0
1.5
1.0
0.5
0.0
40
30
20
10
0
0
3
0
0
f = 200 MHz
V
V
f = 200 MHz
V
V
f = 200 MHz
V
G2S
V
DS
G2S
DS
DS
DS
1
= 5 V
= 5 V
– Gate 2 Source Voltage ( V )
– Gate 2 Source Voltage ( V )
– Drain Source Voltage ( V )
= 4 V
4
1
2
5
2
3
6
3
4
Document Number 85049
Rev. 1.7, 08-Sep-08
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4
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