S595T-GS08 Vishay, S595T-GS08 Datasheet - Page 2

• Manufacturer Part Number: S595T-GS08
• Manufacturer: Vishay

Specifications of S595T-GS08

• Application: VHF/UHF
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 28/20dB
• Noise Figure (max): 1.3(Typ)dB
• Package Type: SOT-143
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.3@5VpF
• Output Capacitance (typ)@vds: 1.1@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

S595T / S595TR / S595TRW
Vishay Semiconductors
Absolute Maximum Ratings
T
Maximum Thermal Resistance
1)
Electrical DC Characteristics
T
Caution for Gate 1 switch-off mode:
No external DC-voltage on Gate 1 in active mode!
Switch-off at Gate 1 with V
Using open collector switching transistor (inside of PLL), insert 10 kΩ collector resistor.
Electrical AC Characteristics
T
V
www.vishay.com
2
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Channel ambient
Gate 1 - source breakdown
voltage
Gate 2 - source breakdown
voltage
Gate 1 - source leakage current + V
Gate 2 - source leakage current ± V
Drain current
Self-biased operating current
Gate 2 - source cut-off voltage
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
amb
amb
amb
DS
on glass fibre printed board (25 x 20 x 1.5) mm
= 5 V, V
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
Parameter
G2S
= 4 V, I
D
= I
G1S
DSP
< 0.7 V is feasible.
, f = 1 MHz
T
1)
± I
± I
- V
V
V
V
G
f = 200 MHz
G
f = 800 MHz
amb
DS
DS
DS
S
S
G1S
G2S
G1S
G1S
G2S
= 2 mS, G
= 3,3 mS, G
= 5 V, V
= 5 V, V
= 5 V, V
≤ 60 °C
= 10 mA, V
= 10 mA, V
= 5 V, V
= 5 V, V
= 5 V, V
Test condition
Test condition
Test condition
Test condition
G1S
G1S
G1S
L
3
G2S
= 0.5 mS,
G2S
G1S
L
= nc, V
plated with 35 μm Cu
= nc, I
= 0, V
= 1 mS,
G2S
G1S
= V
= V
= V
= V
= V
G2S
D
DS
G2S
DS
DS
= 20 μA
DS
DS
= 0
= 0
= 0
= 4 V
= 4 V
= 0 ± V
= 0 ± V
V
Symbol
+ I
± I
Symbol
- I
G2S(OFF)
C
(BR)G1SS
(BR)G2SS
|y
I
I
C
C
G
G
DSS
DSP
G1SS
issg1
± V
G1SS
G2SS
21s
± I
oss
rss
ps
ps
Symbol
Symbol
R
G1/G2SM
|
G1/G2SM
V
T
T
P
thChA
I
DS
Ch
stg
D
tot
Min
Min
50
28
17
7
7
9
- 55 to + 150
Value
Value
Typ.
Typ.
200
150
450
1.0
2.3
1.1
30
10
13
30
25
28
20
8
6
Document Number 85049
Max
Max
100
500
2.7
10
10
50
20
18
35
Rev. 1.7, 08-Sep-08
K/W
Unit
mW
Unit
mA
mA
°C
°C
V
V
Unit
Unit
mA
mS
μA
μA
nA
μA
pF
pF
dB
dB
fF
V
V
V