S503TRW-GS08 Vishay, S503TRW-GS08 Datasheet - Page 2

• Manufacturer Part Number: S503TRW-GS08
• Manufacturer: Vishay

Specifications of S503TRW-GS08

• Application: VHF/UHF
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 28@5VdB
• Noise Figure (max): 1.3(Typ)dB
• Package Type: SOT-343R
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.2@5V@Gate 1pF
• Output Capacitance (typ)@vds: 1.5@5VpF
• Reverse Capacitance (typ): 0.03@5VpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200@Ta=60CmW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

S503T/S503TR/S503TRW
Vishay Semiconductors
Absolute Maximum Ratings
T
Maximum Thermal Resistance
1)
Electrical DC Characteristics
T
Remark on improving intermodulation behavior:
By setting R
Electrical AC Characteristics
T
V
www.vishay.com
2
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Channel ambient
Drain - source breakdown
voltage
Gate 1 - source breakdown
voltage
Gate 2 - source breakdown
voltage
Gate 1 - source leakage current + V
Gate 2 - source leakage current ±V
Drain - source operating current V
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Power gain
amb
amb
amb
DS
on glass fibre printed board (25 x 20 x 1.5) mm
= 5 V, V
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
Parameter
G1
G2S
smaller than 470 kΩ, e.g. 390 kΩ typical value of I
= 4 V, I
D
= 13 mA, f = 1 MHz
T
1)
I
± I
± I
R
V
V
I
G
f = 200 MHz
G
f = 800 MHz
D
D
amb
DS
DS
DS
G1
S
S
= 10 μA, V
G1S
G2S
= 20 μA
G2S
G1S
= 2 mS, G
= 3,3 mS, G
= V
= V
= 5 V, V
= 470 kΩ
≤ 60 °C
= 10 mA, V
= 10 mA, V
= 5 V, V
= 5 V, V
RG1
RG1
Test condition
Test condition
Test condition
Test condition
= 5 V, R
= 5 V, V
G2S
G1S
L
3
G1S
G2S
= 0.5 mS,
L
plated with 35 μm Cu
= 4, I
= 1 mS,
= V
G2S
G1S
= V
G1
= V
G2S
G2S
D
= 470 kΩ,
= V
= V
DS
DS
= 20 μA
= 4 V,
= 0
DS
DS
= 0
= 0
= 0 ± V
= 0 ± V
DSO
V
V
will raise and improved intermodulation behavior will be performed.
V
Symbol
Symbol
+ I
± I
G1S(OFF)
G2S(OFF)
(BR)DSS
C
(BR)G1SS
(BR)G2SS
|y
I
C
C
G
G
DSO
issg1
± V
G1SS
G2SS
21s
± I
oss
rss
ps
ps
Symbol
Symbol
R
G1/G2SM
|
G1/G2SM
V
T
P
T
thChA
I
DS
Ch
stg
D
tot
Min
Min
0.3
15
35
18
7
7
8
- 55 to + 150
Value
Value
Typ.
Typ.
200
150
450
1.0
3.2
1.5
30
10
13
40
30
28
23
8
6
Document Number 85042
Max
Max
1.0
10
10
20
20
18
50
Rev. 1.6, 29-Apr-05
K/W
Unit
mW
Unit
mA
mA
°C
°C
V
V
Unit
Unit
mA
mS
nA
nA
dB
dB
pF
pF
fF
V
V
V
V
V