S503TRW-GS08 Vishay, S503TRW-GS08 Datasheet

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S503TRW-GS08

Manufacturer Part Number
S503TRW-GS08
Description
Manufacturer
Vishay
Datasheet

Specifications of S503TRW-GS08

Application
VHF/UHF
Continuous Drain Current
0.03A
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
28@5VdB
Noise Figure (max)
1.3(Typ)dB
Package Type
SOT-343R
Pin Count
3 +Tab
Input Capacitance (typ)@vds
3.2@5V@Gate 1pF
Output Capacitance (typ)@vds
1.5@5VpF
Reverse Capacitance (typ)
0.03@5VpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200@Ta=60CmW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
MOSMIC
Comments
MOSMIC - MOS Monolithic Integrated Circuit
Features
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
Typical Application
Parts Table
Document Number 85042
Rev. 1.6, 29-Apr-05
• Easy Gate 1 switch-off with PNP
• High AGC-range
• Integrated gate protection diodes
• Low noise figure
• High gain
• Improved cross modulation at gain reduction
• SMD package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
S503T
S503TR
S503TRW
(V
V
AGC
RG1
switching transistors inside PLL
and WEEE 2002/96/EC
GG
RF in
)
C block
C block
RG1
G1
®
G2
Part
for TV-Tuner Prestage with 5 V Supply Voltage
S
D
C block
RFC
V
RF out
503
53R
W03
DD
13650
(V
DS
)
e3
Marking
S503T/S503TR/S503TRW
Mechanical Data
Typ: S503T
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: S503TR
Case: SOT-143R Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: S503TRW
Case: SOT-343R Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
2
3
4
1
4
1
1
4
2
3
3
2
Electrostatic sensitive device.
Observe precautions for handling.
SOT-143
SOT-143R
SOT-343R
SOT-143R
SOT-343R
SOT-143
Vishay Semiconductors
Package
19216
www.vishay.com
1

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S503TRW-GS08 Summary of contents

Page 1

... Pinning Source Drain Gate Gate 1 Typ: S503TR Case: SOT-143R Plastic case Weight: approx. 8 out Pinning Source Drain Gate Gate 1 Typ: S503TRW Case: SOT-343R Plastic case 13650 Weight: approx. 8.0 mg Pinning Source Drain Gate Gate 1 Marking 503 53R W03 Vishay Semiconductors SOT-143 SOT-143R ...

Page 2

... S503T/S503TR/S503TRW Vishay Semiconductors Absolute Maximum Ratings °C, unless otherwise specified amb Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage ≤ 60 °C Total power dissipation T amb Channel temperature Storage temperature range Maximum Thermal Resistance Parameter ...

Page 3

... Parameter AGC range 800 MHz Noise figure mS 200 MHz G = 3.3 mS 800 MHz Package Dimensions in mm Document Number 85042 Rev. 1.6, 29-Apr-05 S503T/S503TR/S503TRW Test condition Symbol Δ G2S ps = 0 Vishay Semiconductors Min Typ. Max 40 1 1.3 96 12239 www.vishay.com Unit ...

Page 4

... S503T/S503TR/S503TRW Vishay Semiconductors Package Dimensions in mm 0.50(0.020) 0.35 (0.014) 3.0 (0.117) 2.8 (0.109) Mounting Pad Layout 1.8 (0.070) 1.6 (0.062) 0.65 (0.025) 2.0 (0.078) 1.8 (0.070) Package Dimensions in mm www.vishay.com 4 0.9 (0.035) 0.15 (0.006) 0.75 (0.029) 0.08 (0.003) 0...0.1 (0...0.004) 1.17 (0.046) ...

Page 5

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85042 Rev. 1.6, 29-Apr-05 S503T/S503TR/S503TRW and may do so without further notice. Vishay Semiconductors www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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