BG3130E6327XT Infineon Technologies, BG3130E6327XT Datasheet - Page 6

• Manufacturer Part Number: BG3130E6327XT
• Manufacturer: Infineon Technologies

Specifications of BG3130E6327XT

• Application: VHF
• Channel Type: N
• Channel Mode: Depletion
• Continuous Drain Current: 0.025A
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 31@5VdB
• Noise Figure (max): 1.7(Typ)dB
• Package Type: SOT-363
• Pin Count: 6
• Forward Transconductance (typ): 0.033S
• Input Capacitance (typ)@vds: 1.9@5V@Gate 1pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

Gate 1 forward transconductance
g
amp. A = amp. B
Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
fs
DS
=
mS
mA
= 5V, V
40
30
25
20
15
10
13
11
10
5
0
9
8
7
6
5
4
3
2
1
0
0
0
(I
D
0.5
), V
4
G2S
DS
1
8
D
2V
= 5V, V
= 4V, R
1.5
=
12
2
(V
16
2.5V
GG
2.5
G2S
G1
20
) amp.A=amp.B
= 120k
3
= Parameter
24
3V
3.5
28 mA
3.5V
4
I
V
4V
D
V
GG
36
5
6
Drain current I
V
amp. A = amp. B
Drain current I
V
amp. A = amp. B
DS
G2S
mA
µA
= 5V, V
32
24
20
16
12
22
18
16
14
12
10
= 4V, R
8
4
0
8
6
4
2
0
0
0
0.2 0.4 0.6 0.8
1
G2S
G1
D
D
= Parameter
= Parameter in k
2
=
= (V
(V
3
GG
G1S
1
)
4
1.2 1.4 1.6
)
5
BG3130...
2007-06-01
2.5V
2V
4V
V
3V
1.5V
V
V
70
80
100
120
V
GG
G1S
=V DS
7
2