BF966SA Vishay, BF966SA Datasheet - Page 2

• Manufacturer Part Number: BF966SA
• Manufacturer: Vishay

Specifications of BF966SA

• Application: UHF
• Channel Type: N
• Channel Mode: Depletion
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 20V
• Power Gain (typ)@vds: 25@15VdB
• Noise Figure (max): 1.8(Typ)dB
• Package Type: TO-50
• Pin Count: 4
• Forward Transconductance (typ): 0.0185S
• Input Capacitance (typ)@vds: 2.2@15V@Gate 1/1.1@15V@Gate 2pF
• Output Capacitance (typ)@vds: 0.8@15VpF
• Reverse Capacitance (typ): 0.025@15VpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

BF966S
Vishay Semiconductors
Electrical DC Characteristics
T
Electrical AC Characteristics
T
V
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
www.vishay.com
2
Drain - source breakdown
voltage
Gate 1 - source breakdown
voltage
Gate 2 - source breakdown
voltage
Gate 1 - source leakage current ± V
Gate 2 - source leakage current ± V
Drain current
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
amb
amb
DS
96 12159
Figure 1. Total Power Dissipation vs. Ambient Temperature
= 15 V, I
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
300
250
200
150
100
50
0
0
Parameter
Parameter
D
20
T
= 10 mA, V
amb
40
- Ambient Temperature ( °C )
60
G2S
80 100 120 140 160
= 4 V, f = 1 MHz
I
± I
± I
V
V
I
V
V
G
f = 200 MHz
G
f = 800 MHz
V
G
f = 200 MHz
G
f = 800 MHz
D
D
DS
DS
DS
G1S
G2S
S
S
S
S
= 10 µA, - V
G1S
G2S
= 20 µA
G1S
G2S
= 2 mS, G
= 3,3 mS, G
= 2 mS, G
= 3,3 mS, G
= 15 V, V
= 15 V, V
= 15 V, V
= 0, V
= 4 to -2 V, f = 800 MHz
= 10 mA, V
= 10 mA, V
= 5 V, V
= 5 V, V
Test condition
Test condition
G2S
G1S
G1S
G2S
L
L
G1S
G2S
G1S
= 0.5 mS,
= 0.5 mS,
L
L
= 4 V
= 0, V
= 1 mS,
= 1 mS,
= 0, I
G2S
G1S
= 4 V,
= - V
= V
= V
= V
= V
D
G2S
G2S
DS
DS
= 20 µA
DS
DS
= 0
= 0
= 4 V
= 4 V BF966S
= 0
= 0
BF966SA
BF966SB
Symbol
| y
12762
C
C
Part
∆G
C
C
G
G
issg1
issg2
21s
F
F
oss
rss
ps
ps
ps
36
32
28
24
20
16
12
|
8
4
0
Figure 2. Drain Current vs. Drain Source Voltage
0
± V
± V
-V
-V
V
Symbol
V
G2S
± I
± I
2
G1S(OFF)
G2S(OFF)
(BR)G1SS
(BR)G2SS
(BR)DS
I
I
I
DSS
DSS
DSS
V
G1SS
G2SS
Min
= 4 V
DS
15
40
4
V
– Drain Source Voltage ( V )
G1S
6
= 2 V
8
Min
9.5
20
8
8
4
4
18.5
Typ.
2.2
1.1
0.8
1.0
1.8
10
25
25
18
1.5 V
12
1 V
Typ.
–0.5 V
0.5 V
14
–1 V
0 V
Document Number 85004
Max
16
2.6
1.2
35
Rev. 1.5, 15-Apr-05
Max
10.5
2.5
2.0
14
14
50
50
18
18
Unit
mS
pF
pF
pF
dB
dB
dB
dB
dB
fF
Unit
mA
mA
mA
nA
nA
V
V
V
V
V