TDA8263HN/C1.118 NXP Semiconductors, TDA8263HN/C1.118 Datasheet - Page 12

TDA8263HN/C1.118

Manufacturer Part Number
TDA8263HN/C1.118
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of TDA8263HN/C1.118

Lead Free Status / Rohs Status
Compliant
Philips Semiconductors
9397 750 13193
Product data sheet
Table 15:
These bits control the additional gain of the baseband between 0 dB and 9dB
[1]
Table 16:
This bit controls the RF attenuation inside the LNA amplifier.
Table 17:
Table 18:
These bits force the inputs of the main loop charge pump. Thus the current and leakage
measurement could be done. This test could be used also to force the LC VCO at its maximum or
minimum tuning voltage.
BBGAIN3
CPTST
Typical values at nominal process and room temperature.
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
1
1
1
1
CPCURSEL
RFATT
RX baseband gain control; bits BBGAIN[3:0]
20 dB RF attenuation control; bit RFATT
Select main loop charge-pump current; bit CPCURSEL
Main loop charge pump test; bits CPTST, FUP and FDN
0
1
0
1
BBGAIN2
FUP
X
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
Rev. 01 — 14 December 2004
Action
normal gain of RF path
20 dB attenuation. When active, the LNA works in attenuation ( 8 dB
gain).
Action
low charge-pump current
high charge-pump current
BBGAIN1
FDN
X
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
Actions
test disable
sink and source off; leakage measurement
sink off and source on; source measurement
sink on and source off; sink measurement
sink on and source on
BBGAIN0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Decimal
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Fully integrated satellite tuner
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Additional gain in dB
0
0
0
0
0
1.6
3
4.6
6.3
7.3
8.2
8.5
8.8
8.8
9
9
TDA8263HN
[1]
12 of 28

Related parts for TDA8263HN/C1.118