BGS12AL76E6327XT Infineon Technologies, BGS12AL76E6327XT Datasheet - Page 7

• Manufacturer Part Number: BGS12AL76E6327XT
• Manufacturer: Infineon Technologies

Specifications of BGS12AL76E6327XT

• Frequency (max): 3GHz
• Insertion Loss (max): 0.7dB
• Pin Count: 6
• Lead Free Status / Rohs Status: Supplier Unconfirmed

SPDT RF Switch
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Main features:
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Description
The BGS12AL7-6 General Purpose RF MOS switch is designed to cover a broad range of applications from
30 MHz to 3 GHz. The symmetric design of its single pole double throw configuration, as shown in
high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS
or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power
level of 21 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of
0.4 dB in the 1 GHz and 0.5 dB in the 2 GHz range.
Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied
externally.
Product Name
BGS12AL7-6
Data Sheet
Low insertion loss
High port-to-port-isolation
Low harmonic generation
On-chip control logic, only one control line required
High ESD robustness
No external components required
General purpose switch for applications up to 3 GHz
Small leadless package TSLP-7-6
Lead and halogen free package (RoHS and WEEE compliant)
Features
Package
TSLP7-6
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Chip
M4781
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Revision 2.0, 2009-11-24
Marking
12
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6
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BGS12AL7-6
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Figure 1
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offers