BGB210S NXP Semiconductors, BGB210S Datasheet - Page 2

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BGB210S

Manufacturer Part Number
BGB210S
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BGB210S

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Bluetooth 2.0 + EDR
The Bluetooth 2.0 + EDR standard provides data rates up
to three times higher than previous versions, resulting in
faster data transfer and lower power consumption for a given
data throughput. Higher bandwidth utilization is especially
important in applications that mix voice and data, and in
multipoint and scatternet scenarios.
Industry-leading small size
Advanced processing technologies and packaging techniques
optimize cost, size, and performance. The entire system is
housed in an ultra-small, 44-pin TFBGA package that measures
only 3.0 x 5.0 x 1.15 mm. A few non-RF-critical components,
an antenna filter, and an antenna are all that’s required to
complete the application.
The BGB210S integrates Bluetooth RF functionality and
embedded Link Manager (LM) software with a host controller
interface (HCI).
The baseband, which is manufactured in a state-of-the-art,
low-power CMOS technology, uses an integrated industry-
standard ARM7 microcontroller (with internal RAM and ROM)
to provide ample processing power. The core supports a
variety of interfaces, including UART, PCM, and wireless LAN
(WLAN) coexistence using packet traffic arbitration (PTA).
The transceiver, manufactured in baseline CMOS technology,
uses a near-zero IF (N-ZIF) radio architecture optimized for
systems with multiple wireless links, so antenna placement is
more flexible in GSM/WCDMA phones. The transceiver also
has an integrated Rx/Tx switch, along with a balun, for a
single-ended, 50-Ω connection to the antenna filter.
The reference clock can be provided by a crystal or the
host system.
RF power control
The BGB210S is designed for mobile applications, so it
supports Class 2 and Class 3 of the Bluetooth 2.0 + EDR
standard. Also, to limit range and improve security, there is a
mode with reduced output power for use during inquiry scan.
www.nxp.com
© 2007 NXP B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and
reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use.
Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Low power consumption
For very low-power Bluetooth operation in mobile phones,
the BGB210S uses a single 1.8 V supply. Power consumption
in voice (HV3) mode is only 14 mA, in Sniff 1.28s mode is only
127μA, and during System Off mode is less than 5 μA.
Coexistence with 802.11 WLAN
The BGB210S supports collaboration with co-located
IEEE 802.11 WLAN systems. A dedicated software and
hardware interface implements PTA with voice priority
between the BGB210S and the WLAN system. The PTA
enables simultaneous Bluetooth voice connection and WLAN
VoIP. There are special arrangements to support burst and
fragmented frames, and the BGB210S implements adaptive
frequency hopping (AFH) as defined in the Bluetooth 2.0
specification.
BGB210S functional block diagram
Ordering information
Part No.
BGB210S
Description
Bluetooth 2.0
+ EDR
Process
CMOS
Date of release: June 2007
Document order number: 9397 750 16087
Printed in the Netherlands
Package
TFBGA44
Size
3.0 x 5.0 x
1.15 mm

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