HMMC-5027 Avago Technologies US Inc., HMMC-5027 Datasheet - Page 4

• Manufacturer Part Number: HMMC-5027
• Manufacturer: Avago Technologies US Inc.
• Type: Power Amplifierr

Specifications of HMMC-5027

• Number Of Channels: 1
• Frequency (max): 26.5GHz
• Output Power: 19dBm
• Power Supply Requirement: Single
• Single Supply Voltage (max): 8V
• Package Type: Chip
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Supply Current: 500@8VmA
• Lead Free Status / Rohs Status: Compliant

4
Figure 2. Bonding Pad Locations.
Figure 3. Assembly Diagram. (For 2.0 – 26.5 GHz Operation)
Trace Offset
(1.0 mil Gold Wire Bond
with length of 200 mils)
(6.6 mils)
168 µm
4 nH Inductor
(±10 µm)
770
0.7 mil dia. Gold Bond Wire
(Length NOT important)
1.5 mil dia.Gold Wire
700
465
220
Bond to ≥15 nF
Drain
Input
Aux.
V
DC Feedthru
0
RF
DD
70
70
(V
(RF Input Pad)
DD
and Aux Drain Pads)
nom. gap
V
IN
2.0 mil
DD
Gold Plated Shim
nom. gap
V
2.0 mil
G1
Chip ID No.
OUT
≥68 pF Capacitor
Bonding Island
2980 (± 10 µm)
Bond to ≥15 nF DC Feedthru
Note:
Total offset between RF input and RF
output pad is 335 µm (13.2 mils).
1.5 mil dia.Gold Wire
Notes:
All dimensions in microns.
Rectangular Pad Dim: 75 x 75 µm.
Octagonal Pad Dim: 90 µm dia.
All other dimensions ±5 µm (unless otherwise noted).
Chip thickness: 127 ± 15 µm.
Trace Offset
Input and Output Thin Film
(6.6 mils)
168 µm
DC Blocking Capacitor
V
G1
Circuit with ≥8 pF
2290
(RF Output Pad)
2580
(V
Aux. Gate
G2
2900
Pad)
2910
Output
RF
V
G2
555
285
75