HMMC-5026 Avago Technologies US Inc., HMMC-5026 Datasheet - Page 4

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HMMC-5026

Manufacturer Part Number
HMMC-5026
Description
Manufacturer
Avago Technologies US Inc.
Type
General Purposer
Datasheet

Specifications of HMMC-5026

Number Of Channels
1
Frequency (max)
26.5GHz
Output Power
15@26500MHzdBm
Power Supply Requirement
Single
Single Supply Voltage (max)
8V
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Supply Current
250@7VmA
Lead Free Status / Rohs Status
Compliant
4
Figure 2. HMMC-5021/26 Bonding Pad Locations.
Figure 3. HMMC-5021/26 Assembly Diagram. (For 2.0 –26.5 GHz Operation)
(±10 µm)
Trace Offset
(0.7 mil Gold Wire Bond
(6.6 mils)
(RF Input Pad)
with length ≥150 mils)
770
168 µm
≥4 nH Inductor
225
225
Drain
Input
Aux.
V
RF
0.7 mil dia. Gold Bond Wire
DD
(Length NOT important)
85
1.5 mil dia.Gold Wire
Bond to ≥15 nF
80
DC Feedthru
270
(V
75
DD
and Aux Drain Pads)
Chip ID No.
nom. gap
V
IN
2.0 mil
DD
1695
Gold Plated Shim
nom. gap
V
2.0 mil
G1
Temp. Diode Sense
OUT
≥68 pF Capacitor
2980 (± 10 µm)
Bonding Island
Bond to ≥15 nF DC Feedthru
1.5 mil dia.Gold Wire
Diode Force
200
Temp.
Trace Offset
Input and Output Thin Film
(6.6 mils)
168 µm
DC Blocking Capacitor
Circuit with ≥8 pF
200
V
G1
(RF Output Pad)
695
Aux. Gate
(V
G2
Note:
Total offset between RF input
and RF output pad is 335 µm
(13.2 mils).
Notes:
All dimensions in microns.
Rectangular Pad Dim: 75 x 75 µm.
Octagonal Pad Dim: 90 µm dia.
All other dimensions ±5 µm
Chip thickness: 127 ± 15 µm.
490
80
Pad)
(unless otherwise noted).
75
Output
80
RF
V
G2
300
560

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