S29AL016D90TFI02 Spansion Inc., S29AL016D90TFI02 Datasheet - Page 48

• Manufacturer Part Number: S29AL016D90TFI02
• Manufacturer: Spansion Inc.

Specifications of S29AL016D90TFI02

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

18. Erase and Programming Performance
48
Notes
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, D
2. Figure indicates the last two bus cycles of the command sequence.
3. Word mode address used as an example.
Notes
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
(Note 3)
than the maximum program times listed.
on page 30
Addresses
RESET#
RY/BY#
for further information on command definitions.
WE#
Data
OE#
CE#
Parameter
Figure 17.13 Alternate CE# Controlled Write Operation Timings
t
RH
Byte Mode
Word Mode
555 for program
2AA for erase
t
t
t
WS
WC
WH
CC
= 2.7 V, 1,000,000 cycles.
A0 for program
55 for erase
t
GHEL
t
t
t
DS
PA for program
SA for sector erase
555 for chip erase
CP
CPH
Typ
S29AL016D
t
AS
t
DH
(Note 1)
0.7
7.2
25
11
7
7
D a t a
t
AH
PD for program
30 for sector erase
10 for chip erase
t
BUSY
S h e e t
Max
°
C, V
t
WHWH1 or 2
21.6
210
210
(Note 2)
10
33
CC
= 3.0 V, 100,000 cycles, checkerboard data pattern.
Data# Polling
S29AL016D_00_A8 February 27, 2009
Unit
µs
µs
DQ7#
PA
s
s
s
s
OUT
D
Excludes 00h programming
prior to erasure
Excludes system level
overhead
OUT
= data written to the device.
Comments
(Note 5)
(Note 4)
Table 10.1