GE28F320J3A110 Intel, GE28F320J3A110 Datasheet - Page 24

• Manufacturer Part Number: GE28F320J3A110
• Manufacturer: Intel

Specifications of GE28F320J3A110

• Cell Type: NOR
• Density: 32Mb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 22/21Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 4M/2M
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

28F256J3, 28F128J3, 28F640J3, 28F320J3
24
A[MAX:3] [A]
D[15:0] [Q]
A[2:1] [A]
WE# [W]
Figure 10. 4-Word Page Mode Read Waveform
OE# [G]
RP# [P]
CEx [E]
NOTES:
NOTE: CE
1. CE
2. When reading the flash array a faster t
first edge of CE0, CE1, or CE2 that disables the device (see
Register reads, query reads, or device identifier reads).
X
low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CE
the first edge of CE0, CE1, or CE2 that disables the device (see
X
low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CE
R6
R5
R7
R2
R3
R4
00
1
GLQV
(R16) applies. For non-array reads, R4 applies (i.e.: Status
R10
R1
R1
R15
01
2
Table
13).
10
Table
3
13).
X
11
high is defined at the
4
X
high is defined at
R10
Datasheet
R9
R8
0606_16