CY7C1514V18-250BZXC Cypress Semiconductor Corp, CY7C1514V18-250BZXC Datasheet - Page 10

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CY7C1514V18-250BZXC

Manufacturer Part Number
CY7C1514V18-250BZXC
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1514V18-250BZXC

Density
72Mb
Access Time (max)
0.45ns
Sync/async
Synchronous
Architecture
QDR
Clock Freq (max)
250MHz
Operating Supply Voltage (typ)
1.8V
Address Bus
21b
Package Type
FBGA
Operating Temp Range
0C to 70C
Number Of Ports
2
Supply Current
950mA
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.9V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
165
Word Size
36b
Number Of Words
2M
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1514V18-250BZXC
Manufacturer:
CYPRESS
Quantity:
250
Truth Table
The truth table for CY7C1510V18, CY7C1525V18, CY7C1512V18, and CY7C1514V18 follow.
Write Cycle Descriptions
The write cycle description table for CY7C1510V18 and CY7C1512V18 follow.
Notes
Document #: 38-05489 Rev. *F
Write Cycle:
Load address on the rising edge of K;
input write data on K and K rising edges.
Read Cycle:
Load address on the rising edge of K;
wait one and a half cycle; read data on C and C rising edges.
NOP: No Operation
Standby: Clock Stopped
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW,
3. Device powers up deselected with the outputs in a tri-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst.
5. “t” represents the cycle at which a Read/Write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging
8. Is based on a write cycle that was initiated in accordance with the
BWS
NWS
H
H
H
H
symmetrically.
different portions of a write cycle, as long as the setup and hold requirements are achieved.
L
L
L
L
0
0
/
BWS
NWS
H
H
H
H
L
L
L
L
1
1
/
L–H
L–H
L–H
L–H
K
Operation
L–H During the data portion of a write sequence:
L–H During the data portion of a write sequence:
L–H No data is written into the devices during this portion of a write operation.
L-H During the data portion of a write sequence:
K
During the data portion of a write sequence:
CY7C1510V18 − both nibbles (D
CY7C1512V18 − both bytes (D
CY7C1510V18 − both nibbles (D
CY7C1512V18 − both bytes (D
During the data portion of a write sequence:
CY7C1510V18 − only the lower nibble (D
CY7C1512V18 − only the lower byte (D
CY7C1510V18 − only the lower nibble (D
CY7C1512V18 − only the lower byte (D
During the data portion of a write sequence:
CY7C1510V18 − only the upper nibble (D
CY7C1512V18 − only the upper byte (D
CY7C1510V18 − only the upper nibble (D
CY7C1512V18 − only the upper byte (D
No data is written into the devices during this portion of a write operation.
represents rising edge.
Write Cycle Descriptions
[17:0]
[17:0]
Stopped
[7:0]
[7:0]
L-H
L-H
L-H
K
) are written into the device.
) are written into the device.
) are written into the device.
) are written into the device.
[8:0]
[8:0]
[17:9]
[17:9]
[3:0]
[3:0]
[7:4]
[7:4]
RPS WPS
) is written into the device, D
) is written into the device, D
table. NWS
H
X
L
X
Comments
) is written into the device, D
) is written into the device, D
) is written into the device, D
) is written into the device, D
) is written into the device, D
) is written into the device, D
[2, 8]
CY7C1510V18, CY7C1525V18
CY7C1512V18, CY7C1514V18
H
L
X
X
0
, NWS
D(A + 0) at K(t) ↑
Q(A + 0) at C(t + 1) ↑ Q(A + 1) at C(t + 2) ↑
D = X
Q = High-Z
Previous State
1
, BWS
[2, 3, 4, 5, 6, 7]
0
, BWS
DQ
1
, BWS
[17:9]
[17:9]
[8:0]
[8:0]
[7:4]
[7:4]
[3:0]
[3:0]
2
remains unaltered.
remains unaltered.
and BWS
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
remains unaltered.
D(A + 1) at K(t) ↑
D = X
Q = High-Z
Previous State
3
can be altered on
Page 10 of 29
DQ
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