IS62LV256-70TI ISSI, Integrated Silicon Solution Inc, IS62LV256-70TI Datasheet - Page 2

SRAM 256K 32Kx8 70ns 3.3v

IS62LV256-70TI

Manufacturer Part Number
IS62LV256-70TI
Description
SRAM 256K 32Kx8 70ns 3.3v
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
Asynchronousr

Specifications of IS62LV256-70TI

Density
256Kb
Access Time (max)
70ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
15b
Package Type
TSOP-I
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
30mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.465V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
28
Word Size
8b
Number Of Words
32K
Memory Size
256 Kbit
Access Time
70 ns
Package / Case
TSOP I-28
Supply Voltage (max)
3.465 V
Supply Voltage (min)
3.135 V
Maximum Operating Current
30 mA
Organization
32 K x 8
Interface
TTL
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Operating Supply Voltage
3.3 V
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS62LV256-70TI
Manufacturer:
ISSI
Quantity:
20 000
IS65LV256AL
IS62LV256AL
PIN CONFIGURATION
28-Pin SOJ/ 28-pin SOP
2
PIN DESCRIPTIONS
ABSOLUTE MAXIMUM RATINGS
t
t
P
I
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
A0-A14 Address Inputs
CE
OE
WE
I/O0-I/O7 I nput/Output
V
GND
Symbol
V
nent damage to the device. This is a stress rating only and functional operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
dd
out
GND
bIas
stg
term
t
I/O0
I/O1
I/O2
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
Chip Enable Input
Output Enable Input
Write Enable Input
Power
Ground
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VDD
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
(1)
TRUTH TABLE
Output Disabled
Read
Write
Mode
Not Selected
(Power-down)
VDD
A11
A13
A14
A12
Integrated Silicon Solution, Inc. — www.issi.com —
WE
OE
A9
A8
A7
A6
A5
A4
A3
PIN CONFIGURATION
28-Pin TSOP
22
23
24
25
26
27
28
1
2
3
4
5
6
7
–0.5 to +4.6
–55 to +125
–65 to +150
Value
0.5
20
WE
X
H
H
L
CE
H
L
L
L
Unit
mA
°C
°C
W
V
OE
X
H
X
L
I/O Operation
High-Z
High-Z
d
d
out
In
V
1-800-379-4774
DD
I
I
I
I
cc
cc
cc
sb
21
20
19
18
17
16
15
14
13
12
11
10
9
8
Current
1
1
1
1
, I
, I
, I
, I
sb
cc
cc
cc
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
10/23/06
2
2
2
2
Rev. B

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