BCR116S Infineon Technologies, BCR116S Datasheet - Page 3

• Manufacturer Part Number: BCR116S
• Manufacturer: Infineon Technologies

Specifications of BCR116S

• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 70
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Packages: SOT363
• Polarity: NPN
• R1 (typ): 4.7 kOhm
• R2: 47.0 k?
• Hfe (min): 70.0
• Vi (on) (min): 0.5 2mA / 0.3V
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
Collector-emitter saturation voltage
I
Input off voltage
I
Input on voltage
I
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
EB
CB
= 100 µA, I
= 10 µA, I
= 5 mA, V
= 10 mA, I
= 100 µA, V
= 2 mA, V
= 10 mA, V
= 5 V, I
= 40 V, I
= 10 V, f = 1 MHz
C
E
CE
CE
B
E
B
= 0
CE
= 0
CE
= 0.5 mA
= 0
= 0
1)
= 5 V
= 0.3 V
= 5 V, f = 100 MHz
= 5 V
A
= 25°C, unless otherwise specified
1)
3
f
C
Symbol
V
V
I
I
h
V
V
V
R
R
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
CEsat
i(off)
i(on)
cb
1
1
/R
2
min.
0.09
0.4
0.5
3.2
50
50
70
-
-
-
-
-
Values
typ.
150
4.7
0.1
3
-
-
-
-
-
-
-
-
max.
0.11
100
155
0.3
0.8
1.4
6.2
BCR116...
2007-07-24
-
-
-
-
-
MHz
pF
Unit
V
nA
µA
-
V
k
-