BLS2731-110 NXP Semiconductors, BLS2731-110 Datasheet - Page 2

BLS2731-110

Manufacturer Part Number
BLS2731-110
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS2731-110

Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
75V
Collector-base Voltage
75V
Emitter-base Voltage
2V
Dc Current Gain (min)
40
Power Dissipation
500W
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-423A
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLS2731-110
Manufacturer:
NXP
Quantity:
36 000
Part Number:
BLS2731-110
Manufacturer:
NXP
Quantity:
1 400
Part Number:
BLS2731-110
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BLS2731-110T
Manufacturer:
COILCRAFT
Quantity:
60 000
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT423A) with the common base connected to the
flange.
QUICK REFERENCE DATA
RF performance at T
2001 Dec 05
Pulsed class-C
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
Suitable for short and medium pulse applications
Internal input and output matching networks for an easy
circuit design
Emitter ballasting resistors improve ruggedness
Gold metallization ensures excellent reliability
Interdigitated emitter-base structure provides high
emitter efficiency
Multicell geometry improves power sharing and reduces
thermal resistance.
Common base class-C pulsed power amplifiers for radar
applications in the 2.7 to 3.1 GHz band.
Microwave power transistor
MODE OF OPERATION
h
= 25 C in a common base class-C test circuit.
2.7 to 3.1
(GHz)
f
WARNING
V
(V)
40
CB
2
dbook, halfpage
PINNING - SOT423A
PIN
1
2
3
>110
(W)
3
P
L
Fig.1 Simplified outline.
collector
emitter
base; connected to flange
(dB)
G
>7
2
1
p
DESCRIPTION
BLS2731-110
Product specification
3
MBK052
>35
(%)
C

Related parts for BLS2731-110