TPC8402 Toshiba, TPC8402 Datasheet - Page 4

• Manufacturer Part Number: TPC8402
• Manufacturer: Toshiba
• Type: Power MOSFETr

Specifications of TPC8402

• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 1.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOP
• Lead Free Status / Rohs Status: Not Compliant

N-ch
Electrical Characteristics
Source−Drain Ratings and Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge 1
Gate−drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn−on time
Fall time
Turn−off time
Pulse (Note 1)
V
(Ta = 25°C)
R
R
Symbol
Symbol
(BR) DSS
DS (ON)
DS (ON)
V
I
Q
I
I
C
|Y
C
C
Q
GSS
DRP
DSS
V
t
Q
t
DSF
off
oss
t
on
gs1
rss
t
iss
gd
th
fs
r
f
g
|
V
V
I
V
V
V
V
V
V
I
D
DR
GS
DS
DS
GS
GS
DS
DS
DD
= 10 mA, V
= 6 A, V
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 4 V, I
= 10 V, I
≈ 24 V, V
D
GS
4
D
D
D
GS
(Ta = 25°C)
GS
= 2.5 A
GS
GS
Test Condition
Test Condition
= 1 mA
= 2.5 A
DS
= 2.5 A
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
—
D
= 5 A
Min.
Min.
0.8
30
—
―
―
―
―
―
―
―
―
―
―
―
―
―
—
—
3
Typ.
Typ.
475
270
—
―
―
―
58
37
85
10
16
13
70
16
11
—
—
6
5
2006-11-13
TPC8402
Max.
Max.
−1.2
±10
2.0
10
80
50
20
―
―
―
―
―
―
―
―
―
―
―
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Unit
Unit
mΩ
mΩ
μA
μA
nC
pF
ns
V
V
S
A
V