TPC8402 Toshiba, TPC8402 Datasheet

TPC8402

Manufacturer Part Number
TPC8402
Description
Manufacturer
Toshiba
Type
Power MOSFETr
Datasheet

Specifications of TPC8402

Number Of Elements
2
Polarity
N/P
Channel Mode
Enhancement
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Power Dissipation
1.5W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOP
Lead Free Status / Rohs Status
Not Compliant

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Lithium-Ion Secondary Battery Applications
Notebook PCs
Portable Equipment Applications
Absolute Maximum Ratings
Low drain−source ON resistance : P Channel R
High forward transfer admittance : P Channel |Y
Low leakage current : P Channel I
Enhancement−mode
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power
dissipation
(t = 10s)
Drain power
dissipation
(t = 10s)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at operation
Channel temperature
Storage temperature range
Note: For Notes 1 to 5, see the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
: P Channel V
(Note 2a)
(Note 2b)
N Channel V
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (π−MOSVI/U−MOSII)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
(Note 2a, Note 3b, Note 5)
DC
Pulse
Single-device operation
Single-device value at
dual operation (Note 3b)
Single-device operation
Single-device value at
dual operation (Note 3b)
th
th
GS
= −0.8~ −2.0 V (V
= 0.8~2.0 V (V
= 20 kΩ)
N Channel I
(Note 3a)
(Note 3a)
(Note 1)
(Note 1)
DS
DSS
N Channel R
DSS
(Ta = 25°C)
Symbol
N Channel |Y
V
P
P
P
P
V
V
DS
E
E
T
= 10 V, I
I
I
T
DGR
D (1)
D (2)
D (1)
D (2)
DSS
GSS
I
DP
AR
stg
AS
AR
D
ch
= −10 μA (V
= 10 μA (V
= −10 V, I
TPC8402
P Channel N Channel
(Note 4a)
D
−4.5
−4.5
0.75
0.45
26.3
−30
−30
−18
±20
1.5
1.0
DS (ON)
DS (ON)
= 1mA)
−55~150
DS
D
fs
fs
Rating
DS
0.10
| = 7 S (typ.)
150
| = 6 S (typ.)
= −1mA)
= 30 V)
1
= −30 V)
(Note 4b)
= 27 mΩ (typ.)
= 37 mΩ (typ.)
0.75
0.45
32.5
±20
1.5
1.0
30
30
20
5
5
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
2-6J1E
2006-11-13
TPC8402
Unit: mm

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TPC8402 Summary of contents

Page 1

... DGR V ±20 ±20 V GSS I −4 − 1.5 1.5 D (1) P 1.0 1 0.75 0.75 D (1) P 0.45 0.45 D (2) 26.3 32 (Note 4a) (Note 4b) I −4 0. 150 ° −55~150 °C stg 1 TPC8402 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.080 g (typ.) Circuit Configuration 2006-11-13 ...

Page 2

... R th (ch-a) (2) (Note 3b) Single-device operation R th (ch-a) (1) (Note 3a) dual operation R th (ch-a) (2) (Note 3b) b) Device mounted on a glass-epoxy board (b) ( Ω −4 Ω 5 TPC8402 Max. Unit 83.3 125 °C/W 167 278 FR-4 25.4 × 25.4 × 0.8 (unit: mm) 2006-11-13 ...

Page 3

... ≈ − − gs1 Q gd (Ta = 25°C) Symbol Test Condition I — DRP −4 DSF TPC8402 Min. Typ. Max. — — ±10 — — −10 −30 — — −15 — — −0.8 — −2.0 — — 3.5 7 — — 970 — ...

Page 4

... DS GS rss C oss off ≈ gs1 Q gd (Ta = 25°C) Symbol Test Condition I — DRP DSF TPC8402 Min. Typ. Max. — — ±10 ― ― 30 ― 0.8 ― 2.0 ― 58 ― ― 475 ― 85 ― 270 ― 10 ― 16 ― 13 ― 70 ― ― ...

Page 5

... P- (ON) 500 300 100 − − −0.1 −0.3 −1 −3 Drain current I 5 TPC8402 – Common source Ta = 25°C Pulse test −10 −30 −100 (A) D 2006-11-13 ...

Page 6

... SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (1) 1.5 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (3) SINGLE-DEVICE OPERATION (2) (4) SINGLE-DEVICE VALUE AT DUAL 1.0 OPERATION (3) (4) 0 100 AMBIENT TEMPERATURE Ta ( −2.2 A −1 120 160 C) ° (NOTE 2a) (NOTE 3b) (NOTE 2b) (NOTE 3a) (NOTE 3b) 150 200 C) ° 6 TPC8402 2006-11-13 ...

Page 7

... SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) 300 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) 100 0.5 0.3 0.1 0.001 − 0.01 0.1 1 PULSE WIDTH t ( TPC8402 (4) (3) (2) (1) SINGLE PULSE 10 100 1000 2006-11-13 ...

Page 8

... N-ch 8 TPC8402 2006-11-13 ...

Page 9

... DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (1) 1.5 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (3) SINGLE-DEVICE OPERATION (2) (4) SINGLE-DEVICE VALUE AT DUAL 1.0 OPERATION (3) (4) 0 100 AMBIENT TEMPERATURE Ta ( (NOTE 2a) (NOTE 3b) (NOTE 2b) (NOTE 3a) (NOTE 3b) 150 200 C) ° 9 TPC8402 2006-11-13 ...

Page 10

... SINGLE-DEVICE OPERATION (NOTE 3a) 500 (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) 300 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) 100 0.5 0.3 0.1 0.001 0.01 − 0 PULSE WIDTH t ( TPC8402 (4) (3) (2) (1) SINGLE PULSE 100 1000 2006-11-13 ...

Page 11

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 11 TPC8402 20070701-EN GENERAL 2006-11-13 ...

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