AM29PL160CB-90SI AMD (ADVANCED MICRO DEVICES), AM29PL160CB-90SI Datasheet - Page 87

• Manufacturer Part Number: AM29PL160CB-90SI
• Manufacturer: AMD (ADVANCED MICRO DEVICES)

Specifications of AM29PL160CB-90SI

• Lead Free Status / Rohs Status: Not Compliant

17. Erase And Programming Performance
May 21, 2008 S29GL-A_00_A12
Notes
1. Typical program and erase times assume the following conditions: 25°C, V
2. Under worst case conditions of 90
3. Effective programming time (typ) is 15 μs (per word), 7.5 μs (per byte).
4. Effective accelerated programming time (typ) is 12.5 μs (per word), 6.3 μs (per byte).
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See
Notes
1. Sampled, not 100% tested.
2. Test conditions T
Sector Erase Time
Chip Erase Time
Total Write Buffer Program Time (Notes 3, 5)
Total Accelerated Effective Write Buffer Program Time (Notes 4, 5)
Chip Program Time
and
Parameter Symbol
Table 10.1 on page 62
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
Parameter
for further information on command definitions.
D a t a
Table 17.1 TSOP Pin and BGA Package Capacitance
Control Pin Capacitance
Parameter Description
°
Output Capacitance
C; Worst case V
Input Capacitance
S h e e t
S29GL016A
S29GL032A
S29GL064A
S29GL016A
S29GL032A
S29GL064A
S29GL-A
CC
, 100,000 cycles.
Typ
V
V
V
OUT
IN
IN
17.5
31.5
(Note 1)
240
200
0.5
32
64
16
63
CC
= 0
= 0
= 0
= 3.0V, 10,000 cycles; checkerboard data pattern.
Test Setup
(Note 2)
Max
TSOP
TSOP
TSOP
128
3.5
BGA
BGA
BGA
35
64
Unit
sec
sec
µs
Typ
4.2
8.5
5.4
7.5
3.9
6
Table 10.2 on page 61
programming prior
Excludes system
level overhead
Excludes 00h
Comments
Max
to erasure
7.5
5.0
6.5
4.7
12
(Note 6)
(Note 7)
9
Unit
pF
pF
pF
pF
pF
pF
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