SI6542DQ-T1 Vishay, SI6542DQ-T1 Datasheet - Page 2

• Manufacturer Part Number: SI6542DQ-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI6542DQ-T1

• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 1W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: TSSOP
• Lead Free Status / Rohs Status: Not Compliant

Notes
a.
b.
www.vishay.com FaxBack 408-970-5600
2-2
Si6542DQ
Vishay Siliconix
Static
Gate Threshold Voltage
Gate Threshold Voltage
Gate-Body Leakage
Z
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Forward Transconductance
Diode Forward Voltage
Diode Forward Voltage
Dynamic
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Delay Time
Rise Time
Rise Time
Turn-Off Delay Time
Turn-Off Delay Time
Fall Time
Fall Time
Source-Drain Reverse Recovery Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
G
V l
b
O S
Parameter
D i C
a
a
a
a
R
i
a
a
300 s, duty cycle
a
a
a
Symbol
V
V
r
r
I
I
DS(on)
DS(on)
t
t
t
t
I
I
I
I
GS(th)
GS(th)
D(on)
D(on)
V
V
Q
Q
Q
Q
d(on)
d(on)
d(off)
d(off)
GSS
DSS
DSS
g
g
Q
Q
t
t
SD
SD
t
t
t
t
rr
rr
fs
fs
gs
gs
gd
gd
2%.
r
r
f
f
g
g
V
V
V
DS
DS
I
I
V
D
D
V
DS
I
DS
D
DS
= 10 V V
= –10 V, V
I
I
F
= 10 V, V
V
F
= –20 V, V
V
V
V
–1 A, V
= 20 V, V
V
= –1.25 A, di/dt = 100 A/ s
V
V
V
V
DS
V
I
V
= 1.25 A, di/dt = 100 A/ s
V
V
V
V
V
V
DS
I
S
1 A, V
1 A, V
DS
DS
GS
S
DD
DS
DS
GS
GS
DD
DD
DS
DS
GS
DS
= –1.25 A, V
= 1.25 A, V
= 0 V, V
= –15 V, I
= V
= –5 V, V
= –4.5 V, I
= V
= –20 V, V
= –10 V, R
= –10 V, I
= 4.5 V, I
= 20 V, V
= 5 V, V
= 10 V, R
= 10 V, R
= 10 V, I
= 15 V, I
N Ch
N-Channel
N Channel
N Ch
N Ch
N-Channel
P-Channel
P-Channel
GEN
GEN
GEN
Test Condition
GS
10 V R
GS
GS
GS
GS
GS
GS
, I
, I
GS
= 10 V I
= –10 V, I
= 10 V, R
= –10 V, R
= 10 V, I
= 0 V, T
D
= 0 V, T
D
GS
GS
D
D
D
= –250 A
D
D
GS
= 250 A
=
GS
L
L
10 V, R
D
GS
GS
L
= – 1.9 A
= 2.5 A
= 2.5 A
=
= 10
= 10
= 10 V
= –10 V
= 1.9 A
= 1.3 A
l
l
l
= 10
= 0 V
= 0 V
1.8
= 0 V
= 0 V
20 V
10
J
D
J
G
D
D
= 55 C
A
G
G
= 55 C
= 2.5 A
= 1 9 A
= –1.9 A
= 6
= 6
6
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min
–1.0
–10
1.0
14
S-00873—Rev. F, 01-May-00
0.065
0.100
Typ
0.13
0.26
0.8
0.8
0.9
1.3
2.1
1.7
12
16
17
45
35
11
11
Document Number: 70171
5
3
7
7
9
6
6
Max
0.175
0.09
0.17
0.32
–1.2
–25
1.2
–1
25
10
10
20
20
20
25
30
30
15
15
70
70
100
1
Unit
nA
nC
nC
ns
ns
V
V
A
A
S
S
V
V
A
A
A
C
C