SI6542DQ-T1 Vishay, SI6542DQ-T1 Datasheet
SI6542DQ-T1
Specifications of SI6542DQ-T1
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SI6542DQ-T1 Summary of contents
Page 1
... GS 0.175 @ V = 4.5 V 1 –10 V 1 –4 N-Channel MOSFET Symbol stg Symbol R thJA Si6542DQ Vishay Siliconix P-Channel MOSFET N-Channel P-Channel Unit 20 – 2.5 1.9 2.0 1 1.25 –1.25 1 0.64 –55 to 150 P-Channel Unit 125 C/W www.vishay.com FaxBack 408-970-5600 2-1 ...
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... Si6542DQ Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage V V GS(th) GS(th) Gate-Body Leakage I GSS Zero Gate Voltage Drain Current Z Zero Gate Voltage Drain Current DSS DSS a a On-State Drain Current On-State Drain Current I I D(on) D(on Drain-Source On-State Resistance ...
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... Total Gate Charge (nC) g Document Number: 70171 S-00873—Rev. F, 01-May- 1000 800 600 400 200 On-Resistance vs. Junction Temperature 2.0 1.5 1.0 0 –50 Si6542DQ Vishay Siliconix Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage ( ...
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... Si6542DQ Vishay Siliconix Source-Drain Diode Forward Voltage 150 1.0 0.4 0.6 0.8 1.0 1.2 V – Source-to-Drain Voltage (V) SD Threshold Voltage 1.0 0 250 A D 0.0 –0.5 –1.0 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 ...
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... Total Gate Charge (nC) g Document Number: 70171 S-00873—Rev. F, 01-May- 1000 800 600 400 200 On-Resistance vs. Junction Temperature 2.0 1.5 1.0 0 –50 Si6542DQ Vishay Siliconix Transfer Characteristics T = – 125 – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage ( ...
Page 6
... Si6542DQ Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.4 0.6 0.8 1.0 1.2 V – Source-to-Drain Voltage (V) SD Threshold Voltage 1 250 A D 0.5 0.0 –0.5 –1.0 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...