AM29LV128MH123REI Spansion Inc., AM29LV128MH123REI Datasheet - Page 64

• Manufacturer Part Number: AM29LV128MH123REI
• Manufacturer: Spansion Inc.

Specifications of AM29LV128MH123REI

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 120ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 24/23Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 3/11.5 to 12.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 16M/8M
• Supply Current: 43mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

REVISION SUMMARY
Revision A (October 3, 2001)
Initial release as abbreviated Advance Information
data sheet.
Revision A+1 (March 20, 2002)
Distinctive Characteristics
Clarified description of Enhanced VersatileIO control.
Ordering Information
Corrected device density in device number/descrip-
tion.
Physical Dimensions
Added drawing that shows both TS056 and TSR056
specifications.
Revision B (July 1, 2002)
Expanded data sheet to full specification version.
Revision B+1 (September 16, 2002)
Distinctive Characteristics, Physical Dimensions
Added 80-Ball Fine-Pitch BGA.
Product Selector Guide
Added 80-Ball Fine-Pitch BGA. Added Note #1. Added
103, 108, 113, 118, 123, 128 regulated OPNs.
Changed all OPNs that end with 4 or 9 to 3 or 8.
Program Suspend/Program Resume Command
Sequence
Changed 1ms to 15μs maximum, with a typical of 5 μs.
Erase Suspend/Erase Resume Commands
Added that the device requires a typical of 5 μs.
Read-Only Operations, Erase Program Operations,
and Alternate CE# Controlled Erase and Program
Operations
Added regulated OPNs. Changed all OPNs that end
with 4 or 9 to 3 or 8.
Revision B+2 (November 11, 2002)
Global
Removed the Enhanced VI/O option and changed it to
VI/O only.
Distinctive Characteristics
Changed the typical sector erase time to TBD.
Changed the typical write buffer word programming
time to TBD.
64
D A T A
Am29LV128MH/L
S H E E T
Product Selector Guide
Removed the 98R, 108, 108R, 118, 118R, 128, and
128R Speed Options.
Replaced Note #2.
Product Selector Guide and Read Only Operations
Added a 30 ns Page Access time and Output Enable
Access time to the 113R and 123R Speed Options.
Ordering Information
Modified Order numbers and package markings to re-
flect the removal of speed options. Modified the V
ranges. Added Notes #1 and #2.
Table 4. Secured Silicon Sector Contents
Added x8 and x16
Operating Ranges
Changed the V
Added V
age range).
DC Characteristics
Removed V
V
CMOS table in the Am29LV640MH/L datasheet.
Erase and Programming Performance
Changed the typicals and/or maximums of Chip Erase
Time, Sector Erase Time, Effective Write Buffer Pro-
gram Time, Program Time, and Accelerated Program
Time to TBD.
Customer Lockable: Secured Silicon Sector NOT
Programmed or Protected at the factory.
Added second bullet, Secured Silicon sector-protect
verify text and figure 3.
Secured Silicon Sector Flash Memory Region, and
Enter Secured Silicon Sector/Exit Secured Silicon
Sector Command Sequence
Noted that the ACC function and unlock bypass modes
are not available when the Secured Silicon sector is en-
abled.
Byte/Word Program Command Sequence, Sector
Erase Command Sequence, and Chip Erase Com-
mand Sequence
Noted that the Secured Silicon Sector, autoselect, and
CFI functions are unavailable when a program or
erase operation is in progress.
IL1
, V
IH1
IO
, V
(regulated voltage range) and V
IL
IL2
, V
IO
, V
IH
supply range to 1.65–3.6 V.
, V
IH2
OL
, V
, and V
OL
, V
OH
OH1
25270C7 January 31, 2007
from table and added
, and V
OH2
IO
from the
(full volt-
IO