BSP250 NXP Semiconductors, BSP250 Datasheet - Page 6

• Manufacturer Part Number: BSP250
• Description: Intermediate level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BSP250

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.25Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 3A
• Power Dissipation: 1.65W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
1997 Jun 20
handbook, halfpage
handbook, halfpage
P-channel enhancement mode
vertical D-MOS transistor
V
(1) T
(2) T
(3) T
Fig.8
Typical V
Fig.10 Temperature coefficient of gate-source
k
GD
=
k
1.2
1.1
1.0
0.9
0.8
0.7
0.6
(A)
= 0.
I S
------------------------------------- -
V
j
j
j
6
4
2
0
GSth
V
= 150 C.
= 25 C.
= 55 C.
0
GSth
50
GSth
Source current as a function of source-drain
diode forward voltage.
threshold voltage.
at 25 C
at T
at I
D
j
0.5
= 1 mA; V
0
1
DS
(1)
=V
50
(2)
GS
1.5
= V
(3)
GSth
100
.
2
T j ( C)
V SD (V)
MBE138
MBE148
150
2.5
6
handbook, halfpage
handbook, halfpage
R DSon
(1) I
(2) I
(3) I
Fig.9
Typical R
(1) I
(2) I
Fig.11 Temperature coefficient of drain-source
k
(m )
V
=
DS
k
10
10
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
D
D
D
---------------------------------------- -
R
D
D
4
3
2
DSon
= 0.1 A.
= 0.5 A.
= 1 A.
= 1 A; V
= 0.5 A; V
R
0
I
DSon
50
DSon
D
Drain-source on-state resistance as a
function of gate-source voltage; typical
values.
on-resistance.
at 25 C
R
at T
at:
DSon
GS
GS
j
; T
2
(1)
= 10 V.
0
= 4.5 V.
(2)(3)
j
= 25 C.
(4) (5)
4
50
(4) I
(5) I
6
D
D
= 3 A.
= 6 A.
Product specification
100
8
T j ( C)
V GS (V)
BSP250
MBE146
MDA218
(1)
(2)
150
10