BGY288 NXP Semiconductors, BGY288 Datasheet - Page 8

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BGY288

Manufacturer Part Number
BGY288
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BGY288

Mounting
Surface Mount
Pin Count
16
Lead Free Status / Rohs Status
Supplier Unconfirmed

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BGY288
Manufacturer:
INTEL
Quantity:
28
Part Number:
BGY288
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Philips Semiconductors
Table 6:
Z
[1]
[2]
[3]
9. Dynamic characteristics
Table 7:
Z
signals on P
f = 824 MHz to 849 MHz for GSM850; f = 880 MHz to 915 MHz for EGSM900; unless otherwise specified.
9397 750 14011
Preliminary data sheet
Symbol
I
Digital inputs: TXON, BAND
V
V
I
I
C
Analog inputs: PC
V
I
C
R
Symbol
P
V
STAB
IL
IH
PC
S
S
IL
IH
PC
D(LB)
PC
i
PC
PC
= Z
= Z
Power amplifier is functional from 2.9 V to 3.1 V, but will not meet all electrical specification points.
Power amplifier is functional from 4.6 V to 5.2 V under 50
P
D(LB)
= 1 : 8 to 4 : 8; unless otherwise specified.
L
L
= 50 ; P
= 50 ; V
= 0 dBm to 4 dBm / P
Parameter
current consumption
LOW-level input voltage
HIGH-level input voltage
LOW-level input current
HIGH-level input current
input capacitance
power control voltage
power control current
PC input capacitance
PC input resistance
Static characteristics
Dynamic characteristics GSM850 and EGSM900 transmit mode
D(LB)
Parameter
RF input power
reference voltage to set
output power
< 50 dBm; LB TX mode selected;
D(HB)
BAT
[3]
= 3.6 V; V
, P
D(LB)
D(HB)
= 0 mW; V
[3]
STAB
= 2 dBm to +2 dBm; V
…continued
= 2.8 V; T
BAT
Conditions
HB TX or LB TX mode
Standby mode
Conditions
f = 897.5 MHz for EGSM900;
f = 836.5 MHz for GSM850;
P
f = 897.5 MHz for EGSM900;
f = 836.5 MHz for GSM850;
P
= 3.6 V; V
L(LB)
L(LB)
mb
= 25 C; = 1 : 8 to 4 : 8; t
= 35 dBm
= 3 dBm
Rev. 01 — 2 February 2005
STAB
BAT
conditions, but will not meet all electrical specification points.
= 3.1 V to 4.6 V; V
= 2.8 V; T
mb
Power amplifier with integrated control loop
= 25 C; unless otherwise specified.
STAB
p
= 575 s to 2300 s; P
= 2.6 V to 3.0 V; T
Min
-
-
0
1.4
-
-
-
0
-
-
100
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
0
-
0.2
mb
Typ
-
-
-
-
-
-
4
-
-
4
1.2
= 20 C to +85 C;
D(LB)
Typ
2
-
-
= 2 dBm; spurious
BGY288
Max
1
1
0.5
3
3
15
-
2.5
-
-
-
Max
4
2
-
Unit
mA
mA
V
V
pF
V
pF
M
Unit
dBm
V
V
A
A
A
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