PUMD3 NXP Semiconductors, PUMD3 Datasheet - Page 4

PUMD3

Manufacturer Part Number
PUMD3
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMD3

Transistor Polarity
NPN/PNP
Collector-emitter Voltage
50V
Dc Current Gain (min)
30
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SOT-363
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PUMD3
Manufacturer:
NXP
Quantity:
36 000
Part Number:
PUMD3
Manufacturer:
NXP
Quantity:
12 000
Part Number:
PUMD3
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
PUMD3
0
Company:
Part Number:
PUMD3
Quantity:
30 000
Part Number:
PUMD3+115
Manufacturer:
NXP
Quantity:
823
Part Number:
PUMD3,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
PUMD3,165
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
PUMD30
Manufacturer:
NXP
Quantity:
51 000
Part Number:
PUMD30
Manufacturer:
PAN
Quantity:
1 831
NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PEMD3_PIMD3_PUMD3_10
Product data sheet
Table 7.
[1]
[2]
[3]
Table 8.
T
Symbol
Per transistor
R
Per device
R
Symbol Parameter
Per transistor; for the PNP transistor with negative polarity
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
th(j-a)
th(j-a)
c
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB with 65 μm copper strip line, standard footprint.
Reflow soldering is the only recommended soldering method.
= 25
°
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage V
on-state input voltage V
bias resistor 1 (input)
bias resistor ratio
collector capacitance V
C unless otherwise specified.
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to ambient
Thermal characteristics
Characteristics
TR1 (NPN)
TR2 (PNP)
SOT363
SOT457
SOT666
SOT363
SOT457
SOT666
Rev. 10 — 15 November 2009
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
Conditions
V
V
V
T
V
V
I
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CE
CE
CB
= 150 °C
= 10 mA; I
Conditions
in free air
in free air
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
PEMD3; PIMD3; PUMD3
C
C
C
E
B
B
B
E
= 0 A
= 5 mA
= 100 μA
C
= 0.5 mA
= 0 A
= 0 A
= 0 A;
= i
= 10 mA
e
= 0 A;
[1][3]
[1][3]
[1]
[2]
[1]
[2]
Min
-
-
-
-
-
-
Min
-
-
-
-
30
-
-
2.5
7
0.8
-
-
-
Typ
-
-
-
-
-
-
Typ
-
-
-
-
-
-
1.1
1.8
10
1
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
625
417
625
416
208
416
Max
100
1
50
400
-
150
0.8
-
13
1.2
-
2.5
3
Unit
K/W
K/W
K/W
K/W
K/W
K/W
Unit
nA
μA
μA
μA
V
V
pF
pF
mV
4 of 11

Related parts for PUMD3