BDP954E6327 Infineon Technologies, BDP954E6327 Datasheet - Page 4

• Manufacturer Part Number: BDP954E6327
• Manufacturer: Infineon Technologies

Specifications of BDP954E6327

• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 120V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 3A
• Dc Current Gain (min): 25
• Power Dissipation: 5W
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / Rohs Status: Compliant

DC current gain h
V
Base-emitter saturation voltage
I
C
CE
= (V
mA
10
10
10
10
10
10
10
10
= 2 V
-
3
2
1
4
3
2
1
0
10
0
BEsat
0
0.2
), h
100 °C
25 °C
-50 °C
10
FE
0.4
1
= 10
FE
= ƒ (I
0.6
10
2
C
0.8
)
10
1
3
-50°C
25°C
100°C
I
V
V
C
mA
BEsat
1.3
10
4
4
Collector-emitter saturation voltage
I
Collector current I
V
C
CE
= ƒ (V
mA
mA
10
10
10
10
10
10
10
10
10
10
= 2 V
4
3
2
1
0
4
3
2
1
0
0
0
CEsat
BDP948, BDP950, BDP954
0.2
0.1
), h
FE
0.4
0.2
= 10
100°C
25°C
-50°C
C
= ƒ (V
0.6
0.3
BE
0.8
0.4
)
2008-10-10
1
-50°C
25°C
100°C
V
V
V
V
CEsat
BE
0.6
1.3