CY62157CV30LL-70BAI Cypress Semiconductor Corp, CY62157CV30LL-70BAI Datasheet

CY62157CV30LL-70BAI

Manufacturer Part Number

CY62157CV30LL-70BAI

Description

Manufacturer

Cypress Semiconductor Corp

Datasheet

1.CY62157CV30LL-70BAI.pdf (12 pages)

Specifications of CY62157CV30LL-70BAI

Density

8Mb

Access Time (max)

70ns

Sync/async

Asynchronous

Architecture

Not Required

Clock Freq (max)

Not RequiredMHz

Operating Supply Voltage (typ)

Address Bus

19b

Package Type

FBGA

Operating Temp Range

-40C to 85C

Number Of Ports

Supply Current

12mA

Operating Supply Voltage (min)

2.7V

Operating Supply Voltage (max)

3.3V

Operating Temperature Classification

Industrial

Mounting

Surface Mount

Pin Count

Word Size

16b

Number Of Words

512K

Lead Free Status / Rohs Status

Not Compliant

Available stocks

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Part Number

Manufacturer

Quantity

Price

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Bonase Electronics (HK) Co., Limited

Part Number:

CY62157CV30LL-70BAI

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

CY62157CV30LL-70BAI

Manufacturer:

CYPRESS

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Cypress Semiconductor Corporation

Document #: 38-05014 Rev. *E

Features

Functional Description

The CY62157CV25/30/33 are high-performance CMOS static

RAMs organized as 512K words by 16 bits. These devices

feature advanced circuit design to provide ultra-low active

current. This is ideal for providing More Battery Life™

Note:

1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.

• Temperature Ranges

• High speed

• Voltage range:

• Ultra-low active power

• Low standby power

• Easy memory expansion with CE

• Automatic power-down when deselected

• CMOS for optimum speed/power

— Commercial: 0°C to 70°C

— Industrial: –40°C to 85°C

— Automotive: –40°C to 125°C

— 55 ns and 70 ns availability

— CY62157CV25: 2.2V–2.7V

— CY62157CV30: 2.7V–3.3V

— CY62157CV33: 3.0V–3.6V

— Typical active current: 1.5 mA @ f = 1 MHz

— Typical active current: 5.5 mA @ f = f

Logic Block Diagram

[1]

, CE

max

•

and OE features

Power -down

Circuit

COLUMN DECODER

(70 ns speed)

DATA IN DRIVERS

3901 North First Street

RAM Array

2048 × 4096

512K × 16

(MoBL™) in portable applications such as cellular telephones.

The devices also have an automatic power-down feature that

significantly reduces power consumption by 80% when

addresses are not toggling. The device can also be put into

standby mode reducing power consumption by more than 99%

when deselected (CE

BHE are HIGH). The input/output pins (I/O

placed in a high-impedance state when: deselected (CE

HIGH or CE

Byte High Enable and Byte Low Enable are disabled (BHE,

BLE HIGH), or during a write operation (CE

HIGH and WE LOW).

Writing to the device is accomplished by taking Chip Enable 1

(CE

I/O pins (I/O

specified on the address pins (A

Enable (BHE) is LOW, then data from I/O pins (I/O

I/O

Reading from the device is accomplished by taking Chip

Enable 1 (CE

Enable 2 (CE

HIGH. If Byte Low Enable (BLE) is LOW, then data from the

memory location specified by the address pins will appear on

I/O

memory will appear on I/O

back of this data sheet for a complete description of read and

write modes.

The CY62157CV25/30/33 are available in a 48-ball FBGA

package.

through A

to I/O

) and Write Enable (WE) inputs LOW and Chip Enable 2

) HIGH. If Byte Low Enable (BLE) is LOW, then data from

) is written into the location specified on the address pins

BHE

BLE

•

. If Byte High Enable (BHE) is LOW, then data from

LOW), outputs are disabled (OE HIGH), both

San Jose

) HIGH while forcing the Write Enable (WE)

) and Output Enable (OE) LOW and Chip

I/O

through I/O

512K x 16 Static RAM

–I/O

BHE

BLE

HIGH or CE

CA 95134

to I/O

CY62157CV25/30/33

), is written into the location

through A

. See the truth table at the

Revised September 24,

LOW or both BLE and

•

through I/O

408-943-2600

LOW and CE

). If Byte High

through

) are

[+] Feedback

Related parts for CY62157CV30LL-70BAI

CY62157CV30LL-70BAI Summary of contents

Page 1

... A 0 Note: 1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05014 Rev. *E (MoBL™) in portable applications such as cellular telephones. The devices also have an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling ...

Page 2

Product Portfolio Product Range Min. CY62157CV25 Industrial 2.2V Industrial CY62157CV30 Industrial 2.7V Industrial Automotive CY62157CV33 Industrial 3.0V Industrial Automotive [ Pin Configurations Pin Definitions Name Input Address Inputs 0 18 Input/Output I/O -I/O . Data ...

Page 3

Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential ...–0. Voltage ...

Page 4

Electrical Characteristics Over the Operating Range (continued) Parameter Description I Automatic CE SB1 Power-Down Current— CMOS Inputs I Automatic CE SB2 Power-Down Current— CMOS Inputs Electrical Characteristics Over the Operating Range Parameter Description V Output HIGH Voltage I = –1.0 ...

Page 5

Capacitance Parameter Description C Input Capacitance IN C Output Capacitance OUT AC Test Loads and Waveforms OUTPUT 30 pF INCLUDING JIG AND SCOPE Equivalent to: Parameters 2.5V R1 16.6 R2 15 1.20 ...

Page 6

Switching Characteristics Over the Operating Range Parameter Read Cycle t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CE LOW and CE ACE LOW to Data Valid ...

Page 7

Switching Waveforms (continued) Read Cycle No. 2 (OE Controlled) ADDRESS ACE OE BHE/BLE t LZBE t LZOE HIGH IMPEDANCE DATA OUT t LZCE SUPPLY CURRENT [14, 18, 19] Write Cycle No. ...

Page 8

Switching Waveforms (continued) Write Cycle No Controlled ADDRESS BHE/BLE OE DATA I/O NOTE 20 t HZOE Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS ...

Page 9

Switching Waveforms (continued) Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) ADDRESS BHE/BLE DATA I/O NOTE 20 Truth Table BHE ...

Page 10

Typical DC and AC Characteristics (Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V Operating Current vs. Supply Voltage 14.0 MoBL 12.0 10 55ns) 8.0 max ...

Page 11

... Ordering Code 55 CY62157CV25LL-55BAI CY62157CV30LL-55BAI CY62157CV33LL-55BAI 70 CY62157CV25LL-70BAI CY62157CV30LL-70BAI CY62157CV30LL-70BAE CY62157CV33LL-70BAI CY62157CV33LL-70BAE Package Diagram 48-Ball ( 1.2 mm) FBGA BA48F MoBL, MoBL2, and More Battery Life are trademarks of Cypress Semiconductor Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders. ...

Page 12

Document History Page Document Title: CY62157CV25/30/33 512K x 16 Static Ram Document Number: 38-05014 REV. ECN NO. Issue Date ** 106184 05/10/01 HRT/MGN New data sheet – Advance Information *A 107241 07/24/01 *B 109621 03/11/02 *C 114218 05/01/02 GUG/MGN Improved ...

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