CY62148DV30LL-70SXI Cypress Semiconductor Corp, CY62148DV30LL-70SXI Datasheet - Page 4

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CY62148DV30LL-70SXI

Manufacturer Part Number
CY62148DV30LL-70SXI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62148DV30LL-70SXI

Density
4Mb
Access Time (max)
70ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
2.5/3.3V
Address Bus
19b
Package Type
SOIC
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
10mA
Operating Supply Voltage (min)
2.2V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
512K
Lead Free Status / Rohs Status
Compliant
Document #: 38-05341 Rev. *D
AC Test Loads and Waveforms
Capacitance
Thermal Resistance
Data Retention Characteristics
Data Retention Waveform
Notes:
V
I
t
t
C
C
Parameter
Parameter
CCDR
CDR
R
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full Device AC operation requires linear V
Parameter
DR
IN
OUT
[9]
Θ
Θ
[8]
JA
JC
V
CE
Parameters
CC
OUTPUT
Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
R
V
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
R1
R2
TH
TH
CC
V
INCLUDING
(for all packages)
CC
for Data Retention
JIG AND
SCOPE
Description
Description
50 pF
Description
R1
[8]
CC
2.5V (2.2V – 2.7V)
R2
ramp from V
T
Still Air, soldered on a 3 x 4.5
inch, four-layer printed circuit
board
(Over the Operating Range)
A
t
CDR
= 25°C, f = 1 MHz, V
1.5V
16667
15385
8000
1.20
Equivalent to:
Test Conditions
DR
to V
V
V
CC(min)
CC
IN
> V
OUTPUT
= 1.5V, CE > V
Rise Time: 1 V/ns
V
CC
DATA RETENTION MODE
> 100 µs or stable at V
CC
GND
Test Conditions
− 0.2V or V
CC
THÉ VENIN EQUIVALENT
= V
V
DR
CC(typ)
10%
3.0V (2.7V – 3.6V)
Conditions
CC
> 1.5 V
IN
− 0.2V,
< 0.2V
VFBGA
R
1554
CC(min)
1103
8.86
TH
1.75
ALL INPUT PULSES
645
72
90%
Ind’l/Auto-A LL
> 100 µs.
V
Ind’l
TH
TSOP II
75.13
8.95
1.5V
L
90%
t
R
10%
Fall time: 1 V/ns
Min Typ
1.5
t
RC
0
CY62148DV30
SOIC
Max
55
22
10
10
Unit
V
[4]
Page 4 of 10
Max
9
6
°C/W
°C/W
Unit
Unit
pF
pF
Unit
µA
µA
ns
ns
V

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