CY62147VLL-70ZI Cypress Semiconductor Corp, CY62147VLL-70ZI Datasheet

CY62147VLL-70ZI

Manufacturer Part Number
CY62147VLL-70ZI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62147VLL-70ZI

Density
4Mb
Access Time (max)
70ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3V
Address Bus
18b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
15mA
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
256K
Lead Free Status / Rohs Status
Not Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
CY62147VLL-70ZI
Manufacturer:
CY
Quantity:
1 548
Cypress Semiconductor Corporation
Document #: 38-05050 Rev. *A
Features
Functional Description
The CY62147V is a high-performance CMOS static RAM
organized as 256K words by 16 bits. These devices feature
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life
portable applications such as cellular telephones. The devices
also have an automatic power-down feature that significantly
reduces power consumption by 99% when addresses are not
toggling. The device can also be put into standby mode when
Note:
1.
• Wide voltage range: 2.7V–3.6V
• Ultra-low active, standby power
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Package available in a standard 44-pin TSOP Type II
Logic Block Diagram
(forward pinout) package
For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Power-down
Circuit
A
A
A
A
A
A
A
A
A
A
A
10
[1]
6
5
4
3
2
1
0
9
8
7
COLUMN DECODER
3901 North First Street
DATA IN DRIVERS
(MoBL
RAM Array
2048 x 2048
256K x 16
CE
®
) in
BHE
BLE
deselected (CE HIGH) or when CE is LOW and both BLE and
BHE are HIGH. The input/output pins (I/O
placed in a high-impedance state when: deselected (CE
HIGH), outputs are disabled (OE HIGH), BHE and BLE are
disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
through A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
LOW, then data from memory will appear on I/O
the truth table at the back of this data sheet for a complete
description of read and write modes.
4M (256K x 16) Static RAM
17
San Jose
). If Byte High Enable (BHE) is LOW, then data
8
through I/O
0
to I/O
I/O
I/O
0
8
CA 95134
– I/O
– I/O
7
BHE
WE
CE
OE
BLE
. If Byte High Enable (BHE) is
15
CY62147V MoBL
0
) is written into the location
7
15
through A
Revised August 28, 2002
0
through I/O
0
17
through I/O
).
408-943-2600
8
to I/O
15
15
. See
7
) are
), is
®
0
[+] Feedback

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CY62147VLL-70ZI Summary of contents

Page 1

... Circuit Note: 1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05050 Rev (256K x 16) Static RAM deselected (CE HIGH) or when CE is LOW and both BLE and BHE are HIGH. The input/output pins (I/O ...

Page 2

... Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential ............... –0.5V to +4.6V DC Voltage Applied to Outputs [2] in High-Z State ....................................–0. Product Portfolio V Range (V) CC Product V V CC(min.) CC(typ.) CY62147VLL 2.7 3.0 Electrical Characteristics Over the Operating Range Parameter Description V Output HIGH Voltage Output LOW Voltage I ...

Page 3

Electrical Characteristics Over the Operating Range (continued) Parameter Description I Automatic CE CE > V SB1 Power-down Current— < 0.3V CMOS Inputs I Automatic CE CE > V SB2 Power-down Current— < 0.3V CMOS ...

Page 4

Data Retention Waveform Switching Characteristics Over the Operating Range[ Parameter Read Cycle t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CE LOW to Data Valid ACE ...

Page 5

Switching Waveforms [12, 13] Read Cycle No. 1 ADDRESS DATA OUT PREVIOUS DATA VALID [13, 14] Read Cycle No ACE OE BHE/BLE t LZOE t DBE t LZBE HIGH IMPEDANCE DATA OUT t LZCE ...

Page 6

Switching Waveforms (continued) [8, 15, 16] Write Cycle No. 2 (CE Controlled) ADDRESS CE BHE/BLE WE DATA I/O Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS CE BHE/BLE DATA I/O NOTE 17 t HZWE Notes: 15. ...

Page 7

Switching Waveforms (continued) Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) ADDRESS CE BHE/BLE DATA I/O NOTE 17 t HZWE Typical DC and AC Characteristics Normalized Operating Current vs. Supply Voltage 1.4 1.2 1.0 0.8 0.6 0.4 ...

Page 8

... Ordering Information Speed (ns) Ordering Code 70 CY62147VLL-70ZI Package Diagram MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05050 Rev. *A © Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product ...

Page 9

Document Title: CY62147V MoBL 4M (256K x 16) Static RAM Document Number: 38-05050 Orig. of REV. ECN NO. Issue Date Change ** 109958 12/16/01 A 116514 09/04/02 Document #: 38-05050 Rev. *A Description of Change SZV Changed from Spec ...

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