CY62136CV33LL-55BAI Cypress Semiconductor Corp, CY62136CV33LL-55BAI Datasheet - Page 5
CY62136CV33LL-55BAI
Manufacturer Part Number
CY62136CV33LL-55BAI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY62136CV33LL-55BAI.pdf
(13 pages)
Specifications of CY62136CV33LL-55BAI
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY62136CV33LL-55BAI
Manufacturer:
CY
Quantity:
32
Document #: 38-05199 Rev. *D
Switching Characteristics
Switching Waveforms
Notes:
10. It
12. Device is continuously selected. OE, CE = V
13. WE is HIGH for read cycle.
11. The internal write time of the memory is defined by the overlap of WE, CE = V
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
t
8.
9.
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
WC
SCE
AW
HA
SA
PWE
BW
SD
HD
HZWE
LZWE
Read Cycle No. 1 (Address Transition Controlled)
DATA OUT
ADDRESS
Test conditions assume signal transition time of 5 ns or less, timing reference levels of V
specified I
At any given temperature and voltage condition, t
given device.
of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates
the write.
HZOE
, t
Parameter
HZCE
OL
[11]
/I
, t
OH
HZBE
and 30-pF load capacitance.
, and t
PREVIOUS DATA VALID
HZWE
transitions are measured when the outputs enter a high-impedance state.
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low-Z
OE HIGH to High-Z
CE LOW to Low-Z
CE HIGH to High-Z
CE LOW to Power-up
CE HIGH to Power-down
BHE/BLE LOW to Data Valid
BHE/BLE LOW to Low-Z
BHE/BLE HIGH to High-Z
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
BHE/BLE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE LOW to High-Z
WE HIGH to Low-Z
Over the Operating Range
IL
, BHE, BLE = V
t
OHA
HZCE
Description
is less than t
[9]
[9]
[9, 10]
[9, 10]
[9, 10]
[9]
t
AA
IL
.
[12, 13]
LZCE
[9]
[9, 10]
, t
[8]
HZBE
IL
is less than t
, BHE and/or BLE = V
t
RC
Min.
CC(typ.)
55
10
10
55
45
45
40
50
25
10
5
0
5
0
0
0
LZBE
55 ns
/2, input pulse levels of 0 to V
, t
HZOE
IL
. All signals must be ACTIVE to initiate a write and any
Max.
is less than t
CY62136CV30/33 MoBL
55
55
25
20
20
55
25
20
20
CY62136CV MoBL
DATA VALID
LZOE
Min.
70
10
10
70
60
60
45
60
30
10
, and t
5
0
5
0
0
0
CC(typ.)
70 ns
HZWE
, and output loading of the
is less than t
Max.
70
70
35
25
25
70
35
25
25
Page 5 of 13
LZWE
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
for any