CY62136CV33LL-55BAI Cypress Semiconductor Corp, CY62136CV33LL-55BAI Datasheet

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CY62136CV33LL-55BAI

Manufacturer Part Number
CY62136CV33LL-55BAI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62136CV33LL-55BAI

Lead Free Status / Rohs Status
Not Compliant

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Part Number:
CY62136CV33LL-55BAI
Manufacturer:
CY
Quantity:
32
Cypress Semiconductor Corporation
Document #: 38-05199 Rev. *D
Features
Functional Description
The
RAM organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
• Very high speed: 55 ns and 70 ns
• Voltage range:
• Pin-compatible with the CY62136V
• Ultra-low active power
• Low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Packages offered in a 48-ball FBGA
Note:
Logic Block Diagram
1.
— CY62136CV30: 2.7V–3.3V
— CY62136CV33: 3.0V–3.6V
— CY62136CV: 2.7V–3.6V
— Typical active current: 1.5 mA @ f = 1 MHz
— Typical active current: 5.5 mA @ f = f
For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
speed)
and CY62136CV are high-performance CMOS static
[1]
A
A
A
A
A
A
A
A
A
A
A
10
3
1
0
9
7
6
5
4
2
8
max
3901 North First Street
COLUMN DECODER
(70-ns
DATA IN DRIVERS
RAM Array
2048 x 1024
128K x 16
This is ideal for providing More Battery Life™ (MoBL
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
reduces power consumption by 80% when addresses are not
toggling. The device can also be put into standby mode
reducing power consumption by more than 99% when
deselected (CE HIGH). The input/output pins (I/O
I/O
(CE HIGH), outputs are disabled (OE HIGH), both Byte High
Enable and Byte Low Enable are disabled (BHE, BLE HIGH),
or during a write operation (CE LOW, and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
through A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
LOW, then data from memory will appear on I/O
the truth table at the back of this data sheet for a complete
description of read and write modes.
15
) are placed in a high-impedance state when: deselected
2M (128K x 16) Static RAM
16
San Jose
). If Byte High Enable (BHE) is LOW, then data
8
through I/O
CY62136CV30/33 MoBL
0
to I/O
I/O
I/O
CA 95134
CY62136CV MoBL
7
0
8
. If Byte High Enable (BHE) is
–I/O
–I/O
15
Revised September 20, 2002
0
BHE
WE
CE
OE
BLE
) is written into the location
through A
7
15
0
16
through I/O
).
408-943-2600
8
to I/O
0
through
15
. See
®
7
), is
) in
0

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CY62136CV33LL-55BAI Summary of contents

Page 1

... Note: 1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05199 Rev (128K x 16) Static RAM This is ideal for providing More Battery Life™ (MoBL portable applications such as cellular telephones. The device ...

Page 2

... DC Input Voltage .................................–0. Output Current into Outputs (LOW) .............................20 mA Product Portfolio V Range (V) CC Product V V CC(min.) CC(typ.) CY62136CV30LL 2.7 3.0 CY62136CV33LL 3.0 3.3 CY62136CVLL 2.7 3.3 Notes pins are not connected to the die (DNU) can be left ensure proper application –2.0V for pulse durations less than 20 ns. ...

Page 3

Electrical Characteristics Over the Operating Range Parameter Description V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH V Input LOW Voltage IL I Input Leakage Current GND < Output Leakage OZ ...

Page 4

Thermal Resistance Parameter Description Thermal Resistance JA [6] (Junction to Ambient) Thermal Resistance JC [6] (Junction to Case) AC Test Loads and Waveforms OUTPUT 30 pF INCLUDING JIG AND SCOPE Parameters ...

Page 5

Switching Characteristics Over the Operating Range Parameter Read Cycle t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CE LOW to Data Valid ACE t OE LOW to Data Valid ...

Page 6

Switching Waveforms (continued) Read Cycle No. 2 (OE Controlled) ADDRESS CE t ACE OE BHE/BLE t t LZOE LZOE t DBE t LZBE HIGH IMPEDANCE DATA OUT t LZCE SUPPLY CURRENT Write Cycle No. 1 (WE ...

Page 7

Switching Waveforms (continued) Write Cycle No. 2 (CE Controlled) ADDRESS CE WE BHE/BLE OE DATA I/O NOTE 17 t HZOE Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS CE BHE/BLE NOTE 17 DATAI/O Document #: 38-05199 ...

Page 8

Switching Waveforms (continued) Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) ADDRESS CE BHE/BLE DATA I/O NOTE 17 Document #: 38-05199 Rev. *D CY62136CV30/33 MoBL [16 SCE PWE t ...

Page 9

Typical DC and AC Parameters (Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V 14.0 12.0 10.0 MoBL 8.0 6.0 4.0 2.0 0.0 2.7 SUPPLY VOLTAGE (V) 12.0 10.0 MoBL ...

Page 10

... Ordering Information Speed (ns) Ordering Code 70 CY62136CV30LL-70BAI CY62136CV30LL-70BVI CY62136CV33LL-70BAI CY62136CV33LL-70BVI CY62136CVLL-70BAI CY62136CVLL-70BVI 55 CY62136CV30LL-55BAI CY62136CV30LL-55BVI CY62136CV33LL-55BAI CY62136CV33LL-55BVI Document #: 38-05199 Rev. *D BLE Inputs/Outputs L High-Z Output Disabled H High-Z Output Disabled L Data In (I/O –I/O ) Write Data In (I/O –I/O ); Write O 7 I/O –I/O in High Data In (I/O –I/O ) ...

Page 11

Package Diagrams 48-ball (7. 7. 1.2 mm) FBGA BA48A Document #: 38-05199 Rev. *D CY62136CV30/33 MoBL CY62136CV MoBL 51-85096-*E Page ...

Page 12

... Document #: 38-05199 Rev. *D © Cypress Semiconductor Corporation, 2002. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user ...

Page 13

Document History Page Document Title: CY62136CV30/33/CY62136CV/CY62136CV30/33 2M (128K x 16) Static RAM Document Number: 38-05199 Issue Orig. of REV. ECN NO. Date Change ** 112379 02/19/02 *A 114023 04/25/02 *B 117063 07/12/02 *C 118121 08/26/02 *D 118622 10/3/02 Document #: ...

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