BFQ34 NXP Semiconductors, BFQ34 Datasheet - Page 8

• Manufacturer Part Number: BFQ34
• Manufacturer: NXP Semiconductors

Specifications of BFQ34

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 18V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 150mA
• Dc Current Gain (min): 25
• Power Dissipation: 2.7W
• Frequency (max): 4GHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Not Compliant

Philips Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 4 GHz wideband transistor
I
I
Z
c
c
o
= 120 mA; V
= 120 mA; V
= 50 .
CE
CE
= 15 V; T
= 15 V; T
amb
amb
= 25 C.
= 25 C.
+ j
– j
Fig.10 Common emitter reverse transmission coefficient (S
180
Fig.11 Common emitter output reflection coefficient (S
0
0.2
0.2
150
150
0.5
0.5
0.2
120
120
0.5
1200
1000
800
200 MHz
90
90
1
1
1
500
8
200 MHz
500
2
800
1000
0.1
60
60
1200
2
2
5
10
MEA316
30
30
MEA318
0.2
5
5
10
10
22
0
).
12
).
Product specification
BFQ34