BFQ34 NXP Semiconductors, BFQ34 Datasheet - Page 8
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BFQ34
Manufacturer Part Number
BFQ34
Description
Manufacturer
NXP Semiconductors
Datasheet
1.BFQ34.pdf
(10 pages)
Specifications of BFQ34
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
18V
Collector-base Voltage
25V
Emitter-base Voltage
2V
Collector Current (dc) (max)
150mA
Dc Current Gain (min)
25
Power Dissipation
2.7W
Frequency (max)
4GHz
Operating Temp Range
-65C to 200C
Operating Temperature Classification
Military
Mounting
Screw
Pin Count
4
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
September 1995
handbook, full pagewidth
handbook, full pagewidth
NPN 4 GHz wideband transistor
I
I
Z
c
c
o
= 120 mA; V
= 120 mA; V
= 50 .
CE
CE
= 15 V; T
= 15 V; T
amb
amb
= 25 C.
= 25 C.
+ j
– j
Fig.10 Common emitter reverse transmission coefficient (S
180
Fig.11 Common emitter output reflection coefficient (S
0
0.2
0.2
150
150
0.5
0.5
0.2
120
120
0.5
1200
1000
800
200 MHz
90
90
1
1
1
500
8
200 MHz
500
2
800
1000
0.1
60
60
1200
2
2
5
10
MEA316
30
30
MEA318
0.2
5
5
10
10
22
0
).
12
).
Product specification
BFQ34