BCX56 NXP Semiconductors, BCX56 Datasheet - Page 13

• Manufacturer Part Number: BCX56
• Manufacturer: NXP Semiconductors

Specifications of BCX56

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 63
• Power Dissipation: 1.25W
• Frequency (max): 180MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-89
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
10. Revision history
Table 10.
BC639_BCP56_BCX56_8
Product data sheet
Document ID
BC639_BCP56_BCX56_8
Modifications:
BC639_BCP56_BCX56_7
BC639_BCP56_BCX56_6
BC635_637_639_4
BCP54_55_56_5
BCX54_55_56_4
Revision history
Release date
20070622
20050308
20050303
20011010
20030206
20011010
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 1 “Product
Section 1.2
Section 1.3
Table 2 “Quick reference
Table 2 “Quick reference
Figure 2
Table 6 “Limiting
Table 6 “Limiting
Table 6 “Limiting
Table 7 “Thermal
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Figure
Table 9 “Packing
Section 11 “Legal
4: Z
4: t
5: added
6: Z
6: t
7: added
8: Z
8: t
9: added
11: amended
and 3: amended
p
p
p
th
th
th
parameter redefined to pulse duration
parameter redefined to pulse duration
parameter redefined to pulse duration
“Features”: amended
“Applications”: amended
Data sheet status
Product data sheet
redefined to Z
redefined to Z
redefined to Z
Product data sheet
Product data sheet
Product specification
Product specification
Product specification
overview”: amended
values”: I
values”: I
values”: P
Rev. 08 — 22 June 2007
methods”: new packing method for BCX56 added
characteristics”: R
information”: updated
data”: I
data”: I
C
CM
th(j-a)
th(j-a)
th(j-a)
tot
parameter redefined to collector current
condition added
values for BCP56 and BCX56 adapted
transient thermal impedance from junction to ambient
transient thermal impedance from junction to ambient
transient thermal impedance from junction to ambient
C
CM
parameter redefined to collector current
condition added
th(j-a)
BC639; BCP56; BCX56
values for BCP56 and BCX56 rounded
Change notice
-
-
CPCN200405029
-
-
-
80 V, 1 A NPN medium power transistors
Supersedes
BC639_BCP56_BCX56_7
BC639_BCP56_BCX56_6
BC635_637_639_4
BCP54_55_56_5
BCX54_55_56_4
BC635_637_639_3
BCP54_55_56_4
BCX54_55_56_3
© NXP B.V. 2007. All rights reserved.
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