SI4410DY-T1-REVA Vishay, SI4410DY-T1-REVA Datasheet - Page 4

• Manufacturer Part Number: SI4410DY-T1-REVA
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4410DY-T1-REVA

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0135Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 10A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Si4410DY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.6
0.4
0.2
40
10
0.01
1
0.0
0.1
- 50
2
1
10
-4
0.2
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
- 25
V
T
SD
J
= 150_C
0.4
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
J
- Temperature (_C)
25
0.6
Single Pulse
10
-3
50
0.8
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
75
T
J
1.0
= 25_C
100
1.2
125
10
-2
1.4
Square Wave Pulse Duration (sec)
150
10
-1
0.10
0.08
0.06
0.04
0.02
0.00
80
60
40
20
0.01
0
0
On-Resistance vs. Gate-to-Source Voltage
V
GS
2
1
- Gate-to-Source Voltage (V)
0.10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
4
Time (sec)
- T
t
1
A
I
= P
D
t
2
= 10 A
DM
Z
S-40838—Rev. L, 03-May-04
thJA
6
t
t
thJA
1.00
1
2
10
Document Number: 71726
(t)
= 50
_
C/W
8
30
10.00
10