Si4410DY-REVA Vishay Intertechnology, Si4410DY-REVA Datasheet
Si4410DY-REVA
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Si4410DY-REVA Summary of contents
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... Top View Ordering Information: Si4410DY Si4410DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
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... Si4410DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...
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... Q - Total Gate Charge (nC) g Document Number: 71726 S-31062—Rev. K, 26-May- 3000 2500 2000 1500 = 10 V 1000 500 40 50 2.0 1.5 1.0 0.5 0 Si4410DY Vishay Siliconix Transfer Characteristics 125_C C 25_C 10 - 55_C Gate-to-Source Voltage (V) GS Capacitance C iss C ...
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... Si4410DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.4 0.2 = 250 0 0.2 - 0.4 - 0.6 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...