MT4C4M4E8DJ-5 Micron Technology Inc, MT4C4M4E8DJ-5 Datasheet - Page 6

• Manufacturer Part Number: MT4C4M4E8DJ-5
• Manufacturer: Micron Technology Inc
• Type: EDO DRAMr

Specifications of MT4C4M4E8DJ-5

• Density: 16Mb
• Access Time (max): 25ns
• Operating Supply Voltage (typ): 5V
• Package Type: SOJ
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4.5V
• Supply Current: 140mA
• Pin Count: 26
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Icc OPERATING CONDITIONS AND MAXIMUM LIMITS
(Notes: 1, 2, 3, 5, 8) (V
4 Meg x 4 EDO DRAM
D47.p65 – Rev. 6/98
PARAMETER/CONDITION
STANDBY CURRENT: TTL
(RAS# = CAS# = V
STANDBY CURRENT: CMOS (non-“S” version only)
(RAS# = CAS# = other inputs = V
STANDBY CURRENT: CMOS (“S” version only)
(RAS# = CAS# = other inputs = V
OPERATING CURRENT: Random READ/WRITE
Average power supply current
(RAS#, CAS#, address cycling:
OPERATING CURRENT: EDO PAGE MODE
Average power supply current (RAS# = V
CAS#, address cycling:
REFRESH CURRENT: RAS#-ONLY
Average power supply current
(RAS# cycling, CAS# = V
REFRESH CURRENT: CBR
Average power supply current
(RAS#, CAS#, address cycling:
REFRESH CURRENT: Extended (“S” version only)
Average power supply current: CAS# = 0.2V or
CBR cycling; RAS# =
V
0.2V (D
REFRESH CURRENT: Self (“S” version only)
Average power supply current: CBR with
RAS# ≥
V
or 0.2V (D
DD
DD
- 0.2V; A0-A11, OE# and D
- 0.2V; A0-A11, OE# and D
IN
t
RASS (MIN) and CAS# held LOW; WE# =
may be left open)
IN
may be left open)
IH
)
DD
t
RAS (MIN); WE# =
t
= +3.3V ± 0.3V)
PC =
IH
:
t
RC =
t
PC [MIN])
IN
IN
t
t
RC =
RC =
DD
DD
= V
= V
t
RC [MIN])
- 0.2V)
- 0.2V)
DD
DD
t
t
RC [MIN])
RC [MIN])
- 0.2V or
- 0.2V
IL
,
6
SYMBOL
I
I
I
I
I
I
I
I
I
CC
CC
CC
CC
CC
CC
CC
CC
CC
1
2
3
4
5
6
7
8
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SPEED
ALL
ALL
ALL
ALL
t
ALL
RC
-5
-6
-5
-6
-5
-6
-5
-6
REFRESH REFRESH UNITS
62.5
500
150
110
100
110
100
110
100
110
100
300
300
2K
1
31.25
500
150
100
300
300
90
80
90
90
80
90
80
4K
1
EDO DRAM
4 MEG x 4
1998, Micron Technology, Inc.
mA
mA
mA
mA
mA
µA
µA
µA
µA
µs
NOTES
7, 9
7, 9
7, 9
25
6
6