TB28F004SC-100 Intel, TB28F004SC-100 Datasheet - Page 8

• Manufacturer Part Number: TB28F004SC-100
• Manufacturer: Intel

Specifications of TB28F004SC-100

• Density: 4Mb
• Access Time (max): 100ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 19b
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: -40C to 85C
• Package Type: SOP
• Program/erase Volt (typ): 3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 512K
• Mounting: Surface Mount
• Pin Count: 44
• Lead Free Status / Rohs Status: Not Compliant

BYTE-WIDE SmartVoltage FlashFile™ MEMORY FAMILY
8
WE#
RY/BY#
V
V
GND
NC
PP
CC
Sym
OUTPUT READY/BUSY#: Indicates the status of the internal WSM. When low, the WSM is
SUPPLY BLOCK ERASE, PROGRAM, LOCK-BIT CONFIGURATION POWER SUPPLY:
SUPPLY DEVICE POWER SUPPLY: Internal detection automatically configures the device
SUPPLY GROUND: Do not float any ground pins.
INPUT
Type
WRITE ENABLE: Controls writes to the CUI and array blocks. Addresses and data
are latched on the rising edge of the WE# pulse.
performing an internal operation (block erase, program, or lock-bit configuration).
RY/BY#-high indicates that the WSM is ready for new commands, block erase or
program is suspended, or the device is in deep power-down mode. RY/BY# is
always active.
For erasing array blocks, programming data, or configuring lock-bits.
With V
lock-bit configuration with an invalid V
results and should not be attempted.
for optimized read performance. Do not float any power pins.
With V
operations at invalid V
results and should not be attempted. Block erase, program, and lock-bit
configuration operations with V
NO CONNECT: Lead is not internally connected; it may be driven or floated.
PP
CC
Table 3. Pin Descriptions (Continued)
V
V
SmartVoltage Flash
SmartVoltage Flash
PPLK
LKO
, all write attempts to the flash memory are inhibited. Device
, memory contents cannot be altered. Block erase, program, and
CC
voltages (see DC Characteristics ) produce spurious
CC
Name and Function
< 3.0 V are not supported.
2.7 V (Read-Only), 3.3 V, and 5 V V
3.3 V, 5 V, and 12 V V
PP
(see DC Characteristics ) produce spurious
PRELIMINARY
PP
CC