TB28F400BVT80 Intel, TB28F400BVT80 Datasheet - Page 27

• Manufacturer Part Number: TB28F400BVT80
• Manufacturer: Intel

Specifications of TB28F400BVT80

• Density: 4Mb
• Access Time (max): 80ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19/18Bit
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: -40C to 85C
• Package Type: SOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 3/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8/16Bit
• Number Of Words: 512K/256K
• Supply Current: 70mA
• Mounting: Surface Mount
• Pin Count: 44
• Lead Free Status / Rohs Status: Not Compliant

3.6.2
The CUI latches commands as issued by system
software and is not altered by V
transitions or WSM actions. Its default state upon
power-up, after exit from deep power-down mode,
or after V
voltage), is read array mode.
After any word/byte write or block erase operation is
complete and even after V
V
via the Read Array command if accesses to the
flash memory are desired.
Please refer to Intel’s application note AP-617
Additional Flash Data Protection Using V
and WP#, for a circuit-level description of how to
implement the protection discussed in Section 3.6.
3.7
Flash memory’s power switching characteristics
require careful device decoupling methods. System
designers should consider three supply current
issues:
1. Standby current levels (I
2. Active current levels (I
3. Transient peaks produced by falling and rising
Abbreviation
PPLK
Table headings in the DC and AC characteristics tables (i.e., BV-60, BV-80, BV-120, TBV-80, TBE-
120) refer to the specific products listed below. See Section 5.0 for more information on product
naming and line items.
SEE NEW DESIGN RECOMMENDATIONS
TBE-120
edges of CE#.
TBV-80
BV-120
BV-60
BV-80
, the CUI must be reset to read array mode
Power Supply Decoupling
V
CC
CC
, V
transitions above V
E28F004BV-T60, E28F004BV-B60, PA28F400BV-T60, PA28F400BV-B60,
E28F400CV-T60, E28F400CV-B60, E28F400BV-T60, E28F400BV-B60
E28F004BV-T80, E28F004BV-B80, PA28F400BV-T80, PA28F400BV-B80,
E28F400CV-T80, E28F400CV-B80, E28F400BV-T80, E28F400BV-B80
E28F004BV-T120, E28F004BV-B120, PA28F400BV-T120, PA28F400BV-B120
TE28F004BV-T80, TE28F004BV-B80, TB28F400BV-T80, TB28F400BV-B80,
TE28F400CV-T80, TE28F400CV-B80, TE28F400BV-T80, TE28F400BV-B80
TE28F004BE-T120, TE28F004BE-B120, TE28F400CE-T120, TE28F400CE-B120
PP
AND RP# TRANSITIONS
CCR
CCS
PP
)
transitions down to
)
LKO
PP
PP
or CE#
(lockout
, RP#,
Applicable Product Names
NOTE:
4-MBIT SmartVoltage BOOT BLOCK FAMILY
Transient current magnitudes depend on the device
outputs’ capacitive and inductive loading. Two-line
control and proper decoupling capacitor selection
will suppress these transient voltage peaks. Each
flash device should have a 0.1 µF ceramic
capacitor connected between each V
and between its V
frequency, inherently low-inductance capacitors
should be placed as close as possible to the
package leads.
3.7.1
Designing for in-system writes to the flash memory
requires special consideration of the V
supply trace by the printed circuit board designer.
The V
for programming and erasing. One should use
similar trace widths and layout considerations given
to the V
supply traces, and decoupling capacitors placed
adjacent to the component, will decrease spikes
and overshoots.
PP
pin supplies the flash memory cells current
CC
V
BOARDS
PP
power supply trace. Adequate V
TRACE ON PRINTED CIRCUIT
PP
and GND. These high-
CC
and GND,
PP
power
27
PP